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參數資料
| 型號： | PHD22NQ20T-01 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | N-channel TrenchMOS?? standard level FET |
| 中文描述： | N溝道TrenchMOS？？標準水平場效應管 |
| 文件頁數： | 2/12頁 |
| 文件大小： | 91K |
| 代理商： | PHD22NQ20T-01 |
Philips Semiconductors
PHD22NQ20T
N-channel TrenchMOS standard level FET
Product data
Rev. 01 — 08 March 2004
2 of 12
9397 750 12882
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
3.
Ordering information
4.
Limiting values
Table 2:
Type number
Ordering information
Package
Name
D-PAK
Description
Plastic single-ended surface mounted package; 3 leads (one lead cropped) SOT428
Version
PHD22NQ20T
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
V
DGR
drain-gate voltage (DC)
V
GS
gate-source voltage (DC)
I
D
drain current (DC)
Limiting values
Conditions
25
°
C
≤
T
j
≤
175
°
C
25
°
C
≤
T
j
≤
175
°
C; R
GS
= 20 k
Min
-
-
-
-
-
-
-
55
55
Max
200
200
±
20
21.1
14.9
42.2
150
+175
+175
Unit
V
V
V
A
A
A
W
°
C
°
C
T
mb
= 25
°
C; V
GS
= 10 V;
Figure 2
and
3
T
mb
= 100
°
C; V
GS
= 10 V;
Figure 2
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 3
T
mb
= 25
°
C;
Figure 1
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
source (diode forward) current (DC)
I
SM
peak source (diode forward) current T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
peak drain current
total power dissipation
storage temperature
junction temperature
T
mb
= 25
°
C
-
-
21.6
42.2
A
A
unclamped inductive load; I
D
= 9.3 A;
t
p
= 0.13 ms; V
DD
≤
200 V; R
GS
= 50
;
V
GS
= 10 V; starting at T
j
= 25
°
C
-
150
mJ
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相關代理商/技術參數 |
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| PHD23NQ10T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS transistor |
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| PHD24N03 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Logic level FET |
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