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參數資料
| 型號： | PHT11N06T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | TrenchMOS transistor Standard level FET |
| 中文描述： | 4.9 A, 55 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數： | 2/9頁 |
| 文件大小： | 69K |
| 代理商： | PHT11N06T |
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
PHT11N06LT
THERMAL RESISTANCES
SYMBOL
R
th j-sp
R
th j-amb
PARAMETER
From junction to solder point
From junction to ambient
CONDITIONS
Mounted on any PCB
Mounted on PCB of Fig.18
TYP.
12
-
MAX.
15
70
UNIT
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL
PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA
MIN.
55
50
1.0
0.6
-
-
-
-
-
10
-
-
TYP.
-
-
1.5
-
-
0.05
-
0.02
-
-
30
-
MAX.
-
-
2.0
-
2.3
10
100
1
5
-
40
74
UNIT
V
V
V
V
V
μ
A
μ
A
μ
A
μ
A
V
m
m
T
j
= -55C
V
DS
= V
GS
; I
D
= 1 mA
T
j
= 150C
T
j
= -55C
I
DSS
Zero gate voltage drain current
V
DS
= 55 V; V
GS
= 0 V;
T
j
= 150C
I
GSS
Gate source leakage current
V
GS
=
±
5 V
T
j
= 150C
±
V
(BR)GSS
R
DS(ON)
Gate source breakdown voltage I
G
=
±
1 mA
Drain-source on-state
resistance
V
GS
= 5 V; I
D
= 5 A
T
j
= 150C
DYNAMIC CHARACTERISTICS
T
mb
= 25C unless otherwise specified
SYMBOL
PARAMETER
g
fs
Forward transconductance
Q
g(tot)
Total gate charge
Q
gs
Gate-source charge
Q
gd
Gate-drain (Miller) charge
C
iss
Input capacitance
C
oss
Output capacitance
C
rss
Feedback capacitance
t
d on
Turn-on delay time
t
r
Turn-on rise time
t
d off
Turn-off delay time
t
f
Turn-off fall time
CONDITIONS
V
DS
= 25 V; I
D
= 5 A; T
j
= 25C
I
D
= 9 A; V
DD
= 44 V; V
GS
= 5 V
MIN.
11
-
-
-
TYP.
19
17
3.5
10
MAX.
-
-
-
-
UNIT
S
nC
nC
nC
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
-
-
-
-
-
-
-
1050
205
110
17
65
70
70
1400
245
150
25
100
105
105
pF
pF
pF
ns
ns
ns
ns
V
DD
= 30 V; I
D
= 9 A;
V
GS
= 5 V; R
G
= 10
;
T
j
= 25C
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= -55 to 175C unless otherwise specified
SYMBOL
PARAMETER
I
DR
Continuous reverse drain
current
I
DRM
Pulsed reverse drain current
V
SD
Diode forward voltage
t
rr
Reverse recovery time
Q
rr
Reverse recovery charge
CONDITIONS
T
sp
= 25C
MIN.
-
TYP.
-
MAX.
10.7
UNIT
A
T
sp
= 25C
I
F
= 5 A; V
GS
= 0 V
I
F
= 5 A; -dI
/dt = 100 A/
μ
s;
V
GS
= -10 V; V
R
= 30 V
-
-
-
-
-
40
1.1
-
-
A
V
ns
μ
C
0.85
45
.3
January 1998
2
Rev 1.100
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相關代理商/技術參數 |
參數描述 |
|---|---|
| PHT11N06TT/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 4.9A I(D) | SOT-223 |
| PHT-120-01-L-D | 制造商:Samtec Inc 功能描述:.100 PRESS FIT SOCKET ASSEMBLY - Bulk |
| PHT-120-01-L-S | 制造商:Samtec Inc 功能描述:.100 PRESS FIT SOCKET ASSEMBLY - Bulk |
| PHT-120-01-S-D | 制造商:Samtec Inc 功能描述:.100 PRESS FIT SOCKET ASSEMBLY - Bulk |
| PHT-120-02-L-D | 制造商:Samtec Inc 功能描述:.100 PRESS FIT SOCKET ASSEMBLY - Bulk |
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