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參數資料
| 型號： | PHT11N06T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | TrenchMOS transistor Standard level FET |
| 中文描述： | 4.9 A, 55 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數： | 5/9頁 |
| 文件大小： | 69K |
| 代理商： | PHT11N06T |
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
PHT11N06LT
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
); conditions: V
DS
= 25 V; parameter T
j
Fig.8. Typical transconductance, T
= 25 C
g
fs
= f(I
D
); conditions: V
DS
= 25 V
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 C
= f(T
j
); I
D
= 5 A; V
GS
= 5 V
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 C; V
DS
= V
GS
Fig.12. Typical capacitances, C
, C
, C
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
0
1
2
3
4
0
5
10
15
20
ID/A
VGS/V
Tj/C =
150
25
BUK98xx-55
-100
-50
0
50
100
150
200
0
0.5
1
1.5
2
2.5
Tj / C
VGS(TO) / V
max.
typ.
min.
5
10
15
20
25
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
Drain current, ID (A)
Transconductance, gfs (S)
0
0.5
1
1.5
2
2.5
3
1E-05
1E-05
1E-04
1E-03
1E-02
1E-01
Sub-Threshold Conduction
2%
typ
98%
BUK98XX-55
-100
-50
0
50
100
150
200
0.5
1
1.5
2
2.5
Tmb / degC
Rds(on) normalised to 25degC
a
0.01
0.1
1
10
100
0
0.5
1.0
1.5
2.0
2.5
Ciss
Coss
Crss
VDS/V
T
January 1998
5
Rev 1.100
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相關代理商/技術參數 |
參數描述 |
|---|---|
| PHT11N06TT/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 4.9A I(D) | SOT-223 |
| PHT-120-01-L-D | 制造商:Samtec Inc 功能描述:.100 PRESS FIT SOCKET ASSEMBLY - Bulk |
| PHT-120-01-L-S | 制造商:Samtec Inc 功能描述:.100 PRESS FIT SOCKET ASSEMBLY - Bulk |
| PHT-120-01-S-D | 制造商:Samtec Inc 功能描述:.100 PRESS FIT SOCKET ASSEMBLY - Bulk |
| PHT-120-02-L-D | 制造商:Samtec Inc 功能描述:.100 PRESS FIT SOCKET ASSEMBLY - Bulk |
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