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參數資料
| 型號： | S29GL032M10BFIR13 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | MirrorBit Flash Family |
| 中文描述： | 2M X 16 FLASH 3V PROM, 100 ns, PBGA64 |
| 封裝： | 13 X 11 MM, LEAD FREE, FORTIFIED BGA-64 |
| 文件頁數： | 15/158頁 |
| 文件大小： | 4695K |
| 代理商： | S29GL032M10BFIR13 |
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August 4, 2004 S29GLxxxM_00_B1_E
S29GLxxxM MirrorBitTM Flash Family
111
Da ta shee t
Figure 6. Erase Operation
Erase Suspend/Erase Resume Commands
The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation and then read data
from, or program data to, any sector not selected for erasure. This command is valid only during the sector erase
operation, including the 50 s time-out period during the sector erase command sequence. The Erase Suspend
command is ignored if written during the chip erase operation or Embedded Program algorithm.
When the Erase Suspend command is written during the sector erase operation, the device requires a typical of
5 s (maximum of 20 s) to suspend the erase operation. However, when the Erase Suspend command is written
during the sector erase time-out, the device immediately terminates the time-out period and suspends the erase
operation.
After the erase operation has been suspended, the device enters the erase-suspend-read mode. The system can
read data from or program data to any sector not selected for erasure. (The device “erase suspends” all sectors
selected for erasure.) Reading at any address within erase-suspended sectors produces status information on
DQ7–DQ0. The system can use DQ7, or DQ6 and DQ2 together, to determine if a sector is actively erasing or is
erase-suspended. Refer to the Write Operation Status section for information on these status bits.
After an erase-suspended program operation is complete, the device returns to the erase-suspend-read mode.
The system can determine the status of the program operation using the DQ7 or DQ6 status bits, just as in the
standard word program operation. Refer to the Write Operation Status section for more information.
In the erase-suspend-read mode, the system can also issue the autoselect command sequence. Refer to the “Au-
toselect Mode” section on page 79 and “Autoselect Command Sequence” section on page 104 sections for details.
START
Write Erase
Command Sequence
(Notes 1, 2)
Data Poll to Erasing
Bank from System
Data = FFh?
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
Notes:
sequence.
2. See the section on DQ3 for information on the sector
erase timer.
相關PDF資料 |
PDF描述 |
|---|---|
| S29GL032M10BFIR30 | T528 Series - I, M, Z Case Sizes - Face Down Termination Tantalum Surface Mount Capacitor; Capacitance [nom]: 220uF; Working Voltage (Vdc)[max]: 6.3V; Capacitance Tolerance: +/-20%; Dielectric: Tantalum, Solid; ESR: 12mΩ; Lead Style: Surface-Mount Chip; Lead Dimensions: 7343-17; Termination: 100% Tin (Sn); Body Dimensions: 7.3mm x 4.3mm x 1.7mm; Temperature Range: -55C to +105C; Container: Tape & Reel; Qty per Container: 1,000; Features: Face Down Termination |
| S29GL032M10FAIR22 | MirrorBit Flash Family |
| S29GL032M10FAIR23 | MirrorBit Flash Family |
| S29GL032M10FAIR30 | MirrorBit Flash Family |
| S29GL032M10FAIR32 | Tantalum Capacitor; Capacitance:220uF; Capacitance Tolerance:+/- 20 %; Working Voltage, DC:10V; Package/Case:7343-31; Terminal Type:PCB SMT; ESR:0.001ohm; Packaging:Cut Tape; Series:T530 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| S29GL032M10BFIR20 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family |
| S29GL032M10BFIR22 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family |
| S29GL032M10BFIR23 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family |
| S29GL032M10BFIR30 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| S29GL032M10BFIR32 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
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