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參數資料
型號: S29GL032M10FFIR12
廠商: SPANSION LLC
元件分類: PROM
英文描述: MirrorBit Flash Family
中文描述: 2M X 16 FLASH 3V PROM, 100 ns, PBGA64
封裝: 13 X 11 MM, LEAD FREE, FORTIFIED, BGA-64
文件頁數: 69/116頁
文件大?。?/td> 6024K
代理商: S29GL032M10FFIR12
54
S29GL-M MirrorBitTM Flash Family
S29GL-M_00_B8 February 7, 2007
Data
Sheet
Figure 2. In-System Sector Group Protect/Sector Group Unprotect Algorithms
Sector Group Protect:
Write 60h to sector
group address with
A6–A0 = 0xx0010
Set up sector
group address
Wait 150 s
Verify Sector Group
Protect: Write 40h
to sector group
address with
A6–A0 = 0xx0010
Read from
sector group address
with A6–A0
= 0xx0010
START
PLSCNT = 1
RESET# = VID
Wait 1
μs
First Write
Cycle = 60h?
Data = 01h?
Remove VID
from RESET#
Write reset
command
Sector Group
Protect complete
Yes
No
PLSCNT
= 25?
Yes
Device failed
Increment
PLSCNT
Temporary Sector
Group Unprotect
Mode
No
Sector Group
Unprotect:
Write 60h to sector
group address with
A6–A0 = 1xx0010
Set up first sector
group address
Wait 15 ms
Verify Sector Group
Unprotect: Write
40h to sector group
address with
A6–A0 = 1xx0010
Read from
sector group
address with
A6–A0 = 1xx0010
START
PLSCNT = 1
RESET# = VID
Wait 1
μs
Data = 00h?
Last sector
group
verified?
Remove VID
from RESET#
Write reset
command
Sector Group
Unprotect complete
Yes
No
PLSCNT
= 1000?
Yes
Device failed
Increment
PLSCNT
Temporary Sector
Group Unprotect
Mode
No
All sector
groups
protected?
Yes
Protect all sector
groups: The indicated
portion of the sector
group protect algorithm
must be performed for all
unprotected sector
groups prior to issuing
the first sector group
unprotect address
Set up
next sector group
address
No
Yes
No
Yes
No
Yes
No
Sector Group
Protect
Algorithm
Sector Group
Unprotect
Algorithm
First Write
Cycle = 60h?
Protect
another
sector group?
Reset
PLSCNT = 1
相關PDF資料
PDF描述
S29GL032M10FFIR20 MirrorBit Flash Family
S29GL032M10FFIR22 Conductive Polymer Chip Capacitors / T530 Series - High Capacitance/Ultra-Low ESR; Capacitance [nom]: 1500uF; Working Voltage (Vdc)[max]: 2.5V; Capacitance Tolerance: +/-20%; Dielectric: Conductive Polymer; ESR: 5.0mΩ; Lead Style: Surface-Mount Chip; Lead Dimensions: 7343-43; Termination: 100% Tin (Sn); Body Dimensions: 7.3mm x 4.3mm x 4mm; Temperature Range: -55C to +125C; Container: Tape & Reel; Qty per Container: 500; Features: High Capacitance; Ultra-Low ESR
S29GL032M10FFIR23 MirrorBit Flash Family
S29GL032M10FFIR30 MirrorBit Flash Family
S29GL032M10FFIR32 MirrorBit Flash Family
相關代理商/技術參數
參數描述
S29GL032M10FFIR13 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL032M10FFIR20 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL032M10FFIR22 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL032M10FFIR23 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family
S29GL032M10FFIR30 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
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