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參數(shù)資料
| 型號： | S29GL032M10FFIR12 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | MirrorBit Flash Family |
| 中文描述： | 2M X 16 FLASH 3V PROM, 100 ns, PBGA64 |
| 封裝： | 13 X 11 MM, LEAD FREE, FORTIFIED, BGA-64 |
| 文件頁數(shù)： | 90/116頁 |
| 文件大小： | 6024K |
| 代理商： | S29GL032M10FFIR12 |
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February 7, 2007 S29GL-M_00_B8
S29GL-M MirrorBitTM Flash Family
73
Data
Sheet
After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6
toggles for approximately 100 s, then returns to reading array data. If not all selected sectors
are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the
selected sectors that are protected.
The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or
is erase-suspended. When the device is actively erasing (that is, the Embedded Erase algorithm
is in progress), DQ6 toggles. When the device enters the Erase Suspend mode, DQ6 stops tog-
gling. However, the system must also use DQ2 to determine which sectors are erasing or erase-
suspended. Alternatively, the system can use DQ7 (see the subsection on DQ7: Data# Polling).
If a program address falls within a protected sector, DQ6 toggles for approximately 1 s after the
program command sequence is written, then returns to reading array data.
DQ6 also toggles during the erase-suspend-program mode, and stops toggling once the Embed-
ded Program algorithm is complete.
and DQ6 in graphical form. Also, see DQ2: Toggle Bit II.
相關PDF資料 |
PDF描述 |
|---|---|
| S29GL032M10FFIR20 | MirrorBit Flash Family |
| S29GL032M10FFIR22 | Conductive Polymer Chip Capacitors / T530 Series - High Capacitance/Ultra-Low ESR; Capacitance [nom]: 1500uF; Working Voltage (Vdc)[max]: 2.5V; Capacitance Tolerance: +/-20%; Dielectric: Conductive Polymer; ESR: 5.0mΩ; Lead Style: Surface-Mount Chip; Lead Dimensions: 7343-43; Termination: 100% Tin (Sn); Body Dimensions: 7.3mm x 4.3mm x 4mm; Temperature Range: -55C to +125C; Container: Tape & Reel; Qty per Container: 500; Features: High Capacitance; Ultra-Low ESR |
| S29GL032M10FFIR23 | MirrorBit Flash Family |
| S29GL032M10FFIR30 | MirrorBit Flash Family |
| S29GL032M10FFIR32 | MirrorBit Flash Family |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL032M10FFIR13 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| S29GL032M10FFIR20 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| S29GL032M10FFIR22 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| S29GL032M10FFIR23 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family |
| S29GL032M10FFIR30 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
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