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參數(shù)資料
型號： S29GL032M10FFIR12
廠商： SPANSION LLC
元件分類： PROM
英文描述： MirrorBit Flash Family
中文描述： 2M X 16 FLASH 3V PROM, 100 ns, PBGA64
封裝： 13 X 11 MM, LEAD FREE, FORTIFIED, BGA-64
文件頁數(shù)： 89/116頁
文件大小： 6024K
代理商： S29GL032M10FFIR12
72
S29GL-M MirrorBitTM Flash Family
S29GL-M_00_B8 February 7, 2007
Data
Sheet
Notes:
1. VA = Valid address for programming. During a sector erase operation, a valid address is any
sector address within the sector being erased. During chip erase, a valid address is any
non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 can change simultaneously with DQ5.
Figure 7. Data# Polling Algorithm
RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin which indicates whether an Embedded Algo-
rithm is in progress or complete. The RY/BY# status is valid after the rising edge of the final WE#
pulse in the command sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can
be tied together in parallel with a pull-up resistor to VCC.
If the output is low (Busy), the device is actively erasing or programming. (This includes program-
ming in the Erase Suspend mode.) If the output is high (Ready), the device is in the read mode,
the standby mode, or in the erase-suspend-read mode. Table 36 shows the outputs for RY/BY#.
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or
complete, or whether the device entered the Erase Suspend mode. Toggle Bit I may be read at
any address, and is valid after the rising edge of the final WE# pulse in the command sequence
(prior to the program or erase operation), and during the sector erase time-out.
During an Embedded Program or Erase algorithm operation, successive read cycles to any ad-
dress cause DQ6 to toggle. The system may use either OE# or CE# to control the read cycles.
When the operation is complete, DQ6 stops toggling.
DQ7 = Data?
Yes
No
DQ5 = 1?
No
Yes
FAIL
PASS
Read DQ15–DQ0
Addr = VA
Read DQ15–DQ0
Addr = VA
DQ7 = Data?
START
相關(guān)PDF資料
PDF描述
S29GL032M10FFIR20 MirrorBit Flash Family
S29GL032M10FFIR22 Conductive Polymer Chip Capacitors / T530 Series - High Capacitance/Ultra-Low ESR; Capacitance [nom]: 1500uF; Working Voltage (Vdc)[max]: 2.5V; Capacitance Tolerance: +/-20%; Dielectric: Conductive Polymer; ESR: 5.0mΩ; Lead Style: Surface-Mount Chip; Lead Dimensions: 7343-43; Termination: 100% Tin (Sn); Body Dimensions: 7.3mm x 4.3mm x 4mm; Temperature Range: -55C to +125C; Container: Tape & Reel; Qty per Container: 500; Features: High Capacitance; Ultra-Low ESR
S29GL032M10FFIR23 MirrorBit Flash Family
S29GL032M10FFIR30 MirrorBit Flash Family
S29GL032M10FFIR32 MirrorBit Flash Family
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL032M10FFIR13 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL032M10FFIR20 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL032M10FFIR22 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL032M10FFIR23 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family
S29GL032M10FFIR30 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
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