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參數資料
| 型號： | S29GL032M10FFIR12 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | MirrorBit Flash Family |
| 中文描述： | 2M X 16 FLASH 3V PROM, 100 ns, PBGA64 |
| 封裝： | 13 X 11 MM, LEAD FREE, FORTIFIED, BGA-64 |
| 文件頁數： | 80/116頁 |
| 文件大小： | 6024K |
| 代理商： | S29GL032M10FFIR12 |
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64
S29GL-M MirrorBitTM Flash Family
S29GL-M_00_B8 February 7, 2007
Data
Sheet
Figure 3. Write Buffer Programming Operation
Write “Write to Buffer”
command and
Sector Address
Write number of addresses
to program minus 1(WC)
and Sector Address
Write program buffer to
flash sector address
Write first address/data
Write to a different
sector address
FAIL or ABORT
PASS
Read DQ7 - DQ0 at
Last Loaded Address
Read DQ7 - DQ0 with
address = Last Loaded
Address
Write next address/data pair
WC = WC - 1
WC = 0 ?
Part of “Write to Buffer”
Command Sequence
Yes
No
Abort Write to
Buffer Operation?
DQ7 = Data?
DQ5 = 1?
DQ1 = 1?
Write to buffer ABORTED.
Must write “Write-to-buffer
Abort Reset” command
sequence to return
to read mode.
(Note 2)
(Note 3)
(Note 1)
Notes:
1. When Sector Address is specified, any address in
the selected sector is acceptable. However, when
loading Write-Buffer address locations with data, all
addresses must fall within the selected Write-Buffer
Page.
2. DQ7 may change simultaneously with DQ5.
Therefore, DQ7 should be verified.
3. If this flowchart location was reached because
DQ5= “1”, then the device FAILED. If this flowchart
location was reached because DQ1= “1”, then the
Write to Buffer operation was ABORTED. In either
case, the proper reset command must be written
before the device can begin another operation. If
DQ1=1, write the Write-Buffer-Programming-
Abort-Reset command. if DQ5=1, write the Reset
command.
required for write buffer programming.
相關PDF資料 |
PDF描述 |
|---|---|
| S29GL032M10FFIR20 | MirrorBit Flash Family |
| S29GL032M10FFIR22 | Conductive Polymer Chip Capacitors / T530 Series - High Capacitance/Ultra-Low ESR; Capacitance [nom]: 1500uF; Working Voltage (Vdc)[max]: 2.5V; Capacitance Tolerance: +/-20%; Dielectric: Conductive Polymer; ESR: 5.0mΩ; Lead Style: Surface-Mount Chip; Lead Dimensions: 7343-43; Termination: 100% Tin (Sn); Body Dimensions: 7.3mm x 4.3mm x 4mm; Temperature Range: -55C to +125C; Container: Tape & Reel; Qty per Container: 500; Features: High Capacitance; Ultra-Low ESR |
| S29GL032M10FFIR23 | MirrorBit Flash Family |
| S29GL032M10FFIR30 | MirrorBit Flash Family |
| S29GL032M10FFIR32 | MirrorBit Flash Family |
相關代理商/技術參數 |
參數描述 |
|---|---|
| S29GL032M10FFIR13 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| S29GL032M10FFIR20 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| S29GL032M10FFIR22 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| S29GL032M10FFIR23 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family |
| S29GL032M10FFIR30 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
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