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參數資料

February 7, 2007 S29GL-M_00_B8

S29GL-M MirrorBitTM Flash Family

Data

Sheet

Write to an address in a sector different than the one specified during the Write-Buffer-Load

command.

Write an Address/Data pair to a different write-buffer-page than the one selected by the

Starting Address during the write buffer data loading stage of the operation.

Write data other than the Confirm Command after the specified number of data load cycles.

The abort condition is indicated by DQ1 = 1, DQ7 = DATA# (for the last address location loaded),

DQ6 = toggle, and DQ5=0. A Write-to-Buffer-Abort Reset command sequence must be written to

reset the device for the next operation.

Note that the Secured Silicon Sector, autoselect, and CFI functions are unavailable when a pro-

gram operation is in progress. This flash device is capable of handling multiple write buffer

programming operations on the same write buffer address range without intervening erases. For

applications requiring incremental bit programming, a modified programming method is required;

please contact your local Spansion representative. Any bit in a write buffer address range

cannot be programmed from “0” back to a “1.” Attempting to do so can cause the device to

set DQ5=1, of cause the DQ7 and DQ6 status bits to indicate the operation was successful. How-

ever, a succeeding read shows that the data is still “0.” Only erase operations can convert a “0”

to a “1.”

Accelerated Program

The device offers accelerated program operations through the WP#/ACC or ACC pin depending

on the particular product. When the system asserts VHH on the WP#/ACC or ACC pin. The device

uses the higher voltage on the WP#/ACC or ACC pin to accelerate the operation. Note that the

WP#/ACC pin must not be at VHH for operations other than accelerated programming, or device

damage can result. WP# has an internal pullup; when unconnected, WP# is at VIH.

Figure 3 illustrates the algorithm for the program operation. See Erase and Program Operations—

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相關代理商/技術參數	參數描述
S29GL032M10FFIR13	制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL032M10FFIR20	制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL032M10FFIR22	制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL032M10FFIR23	制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family
S29GL032M10FFIR30	制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology

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