- 您現在的位置：買賣IC網 > PDF目錄385849 > SML100A9 N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω)(N溝道增強型,高電壓功率MOS場效應管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω)) PDF資料下載
參數資料
| 型號： | SML100A9 |
| 英文描述： | N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω)(N溝道增強型,高電壓功率MOS場效應管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω)) |
| 中文描述： | N溝道增強模式高壓功率MOSFET（減振鋼板基本：1000V的ID已（續）：9A條的Rds（on）：1.100Ω）（不適用溝道增強型，高電壓功率馬鞍山場效應管（減振鋼板基本：1000V的ID已（續）：9A條的Rds（on）：1.100Ω）） |
| 文件頁數： | 1/2頁 |
| 文件大小： | 20K |
| 代理商： | SML100A9 |
SML100A9
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
6/99
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
, T
STG
T
L
I
AR
E
AR
E
AS
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate – Source Voltage
Gate – Source Voltage Transient
Total Power Dissipation @ T
case
= 25°C
Derate Linearly
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
2
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
1000
9
36
±30
±40
200
1.6
–55 to 150
300
9
30
1210
V
A
A
V
W
W/°C
°C
A
mJ
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting T
J
= 25°C, L = 29.88mH, R
G
= 25
, Peak I
L
= 9A
V
DSS
I
D(cont)
R
DS(on)
1.100
1000V
9A
Faster Switching
Lower Leakage
TO–3 Hermetic Package
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
D
S
G
1
2
(c3
25.15 (0.99)
10.67 (0.42)
3
3
2
3
1
1
3.84 (0.151)
4.09 (0.161)
1
1
7.92 (0.312)
2
(
m
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
TO–3 Package Outline.
Dimensions in mm (inches)
Pin 1 – Gate
Pin 2 – Source
Case – Drain
相關PDF資料 |
PDF描述 |
|---|---|
| SML100C4 | N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):3.6A,Rds(on):4.00Ω)(N溝道增強型,高電壓功率MOS場效應管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω)) |
| SML100H9 | N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω)(N溝道增強型,高電壓功率MOS場效應管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω)) |
| SML100W18 | N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):17.3A,Rds(on):0.57Ω)(N溝道增強型,高電壓功率MOS場效應管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω)) |
| SML40H28 | N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:400V,Id(cont):28A,Rds(on):0.140Ω)(N溝道增強型,高電壓功率MOS場效應管(Vdss:400V,Id(cont):28A,Rds(on):0.140Ω)) |
| SML50A15 | N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:500V,Id(cont):14.7A,Rds(on):0.300Ω)(N溝道增強型,高電壓功率MOS場效應管(Vdss:500V,Id(cont):14.7A,Rds(on):0.300Ω)) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SML100B11 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML100B13 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML100C4 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML100H11 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML100H9 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
發布緊急采購，3分鐘左右您將得到回復。