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參數資料
| 型號： | STD3NM50-1 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 500V - 2.5ohm - 3A DPAK/IPAK Zener-Protected MDmesh⑩Power MOSFET |
| 中文描述： | N溝道500V - 2.5ohm -第3A的DPAK /像是iPak齊納⑩保護的MDmesh功率MOSFET |
| 文件頁數： | 1/10頁 |
| 文件大小： | 471K |
| 代理商： | STD3NM50-1 |
1/10
April 2003
STD3NM50
STD3NM50-1
N-CHANNEL 500V - 2.5
- 3A DPAK/IPAK
Zener-Protected MDmeshPower MOSFET
I
TYPICAL R
DS
(on) = 2.5
I
HIGH dv/dt AND AVALANCHE CAPABILITIES
I
IMPROVED ESD CAPABILITY
I
LOW INPUT CAPACITANCE AND GATE
CHARGE
I
LOW GATE INPUT RESISTANCE
I
TIGHT PROCESS CONTROL AND HIGH
MANUFACTORING YIELDS
DESCRIPTION
The MDmesh is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar completition’s products.
APPLICATIONS
The MDmesh family is very suitable for increase
the power density of high voltage converters allow-
ing system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
(
G
)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=15K
)
Derating Factor
dv/dt(1)
Peak Diode Recovery voltage slope
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STD3NM50
STD3NM50-1
500V
500V
< 3
< 3
3 A
3 A
Parameter
Value
Unit
500
V
500
V
±30
V
3
A
1.89
A
12
A
46
W
4
KV
0.37
15
W/°C
V/ns
–65 to 150
°C
150
°C
(1)I
SD
<3A, di/dt<400A/μs, V
DD
<V
(BR)DSS
, T
J
<T
JMAX
1
3
DPAK
TO-252
3
2
1
IPAK
TO-251
INTERNAL SCHEMATIC DIAGRAM
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相關代理商/技術參數 |
參數描述 |
|---|---|
| STD3NM50T4 | 功能描述:MOSFET N-Ch 500 Volt 3 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD3NM60 | 制造商:STMicroelectronics 功能描述:MOSFET N D-PAK 制造商:STMicroelectronics 功能描述:MOSFET N-Channel 600V 3A DPAK |
| STD3NM60-1 | 功能描述:MOSFET N-Ch, 600V-1.3ohms Mdmesh 3A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD3NM60N | 功能描述:MOSFET N-Ch 600 V 1.6 Ohm 3.3 A MDmesh II RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD3NM60T4 | 功能描述:MOSFET N-Ch 600 Volt 3 Amp Power MDmesh RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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