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參數資料
| 型號： | STD3PS25-1 |
| 廠商： | 意法半導體 |
| 英文描述： | P-CHANNEL 250V - 2.1 OHM - 3A DPAK/IPAK MESH OVERLAY MOSFET |
| 中文描述： | P溝道250V - 2.1歐姆-第3A的DPAK /像是iPak MOSFET的網格密胺 |
| 文件頁數： | 1/10頁 |
| 文件大小： | 445K |
| 代理商： | STD3PS25-1 |
1/10
June 2003
STD3PS25 - STD3PS25-1
P-CHANNEL 250V - 2.1
- 3A DPAK/IPAK
MESH OVERLAY MOSFET
I
TYPICAL R
DS
(on) = 2.1
I
100% AVALANCHE TESTED
I
APPLICATION ORIENTED
CHARACTERIZATION
I
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
I
GATE-SOURCE ZENER DIODE
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company’s proprietary edge termina-
tion structure, makes it suitable in coverters for
lighting applications.
APPLICATIONS
I
CONSUMER
I
LIGHTING
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
(1)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
TYPE
V
DSS
R
DS(on)
I
D
STD3PS25
STD3PS25-1
250 V
250 V
< 2.8
< 2.8
3 A
3 A
Parameter
Value
Unit
250
V
250
V
±25
V
3
A
1.9
A
12
A
45
W
0.36
W/°C
– 50 to 150
°C
150
°C
DPAK
1
3
IPAK
3
2
1
INTERNAL SCHEMATIC DIAGRAM
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