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參數資料
| 型號： | STN1NF10 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 100V - 0.7ohm - 1A SOT-223 STripFET⑩ II POWER MOSFET |
| 中文描述： | N溝道100V的- 0.7ohm - 1A條的SOT - 223 STripFET⑩二功率MOSFET |
| 文件頁數： | 1/8頁 |
| 文件大小： | 268K |
| 代理商： | STN1NF10 |
1/8
October 2001
.
STN1NF10
N-CHANNEL 100V - 0.7
- 1A SOT-223
STripFET II POWER MOSFET
I
TYPICAL R
DS
(on) = 0.7
I
EXCEPTIONAL dv/dt CAPABILITY
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
I
DC-DC CONVERTERS
I
DC MOTOR CONTROL (DISK DRIVERS, etc.)
TYPE
V
DSS
R
DS(on)
I
D
STN1NF10
100 V
< 0.8
1 A
1
2
2
3
SOT-223
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuos) at T
C
= 25°C
I
D
Drain Current (continuos) at T
C
= 100°C
I
DM
(
)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt
(1)
Peak Diode Recovery voltage slope
E
AS (2)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
(
)
Pulse width limited by safe operating area.
(1) I
SD
≤
1A, di/dt
≤
350A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 1A, V
DD
= 70V
Parameter
Value
100
100
± 20
1
0.6
4
2.5
0.02
20
35
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 150
°C
INTERNAL SCHEMATIC DIAGRAM
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相關代理商/技術參數 |
參數描述 |
|---|---|
| STN1NF20 | 功能描述:MOSFET N-Channel 1.1 Ohm 200V 1A STripFET II RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STN1NK60Z | 功能描述:MOSFET N-Ch 600 Volt 0.25A Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STN1NK80Z | 功能描述:MOSFET POWER MOSFET Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STN2222 | 制造商:KODENSHI 制造商全稱:KODENSHI KOREA CORP. 功能描述:NPN Silicon Transistor |
| STN2222A | 制造商:AUK 制造商全稱:AUK corp 功能描述:NPN Silicon Transistor |
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