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參數資料
| 型號： | U6264AS1A07 |
| 英文描述： | x8 SRAM |
| 中文描述： | x8的SRAM |
| 文件頁數： | 1/8頁 |
| 文件大小： | 82K |
| 代理商： | U6264AS1A07 |
1
November 01, 2001
U6264ASA07
The U6264ASA07 is a static RAM
manufactured using a CMOS pro-
cess technology with the following
operating modes:
- Read
- Standby
- Write
- Data Retention
The memory array is based on a
6-transistor cell.
The circuit is activated by the rising
edge of E2 (at E1 = L), or the falling
edge of E1 (at E2 = H). The
address and control inputs open
simultaneously. According to the
information of W and G, the data
inputs, or outputs, are active.
During the active state (E1 = L and
E2 = H), each address change
leads to a new Read or Write cycle.
In a Read cycle, the data outputs
are activated by the falling edge of
G, afterwards the data word read
will be available at the outputs
DQ0 - DQ7. After the address
change, the data outputs go High-Z
until the new read information is
available. The full CMOS data out-
puts have no preferred state. If the
memory is driven by CMOS levels
in the active state, and if there is no
change of the address, data input
and control signals W or G, the
operating current (at I
O
= 0 mA)
drops to the value of the operating
current in the Standby mode. The
Read cycle is finished by the falling
edge of E2 or W, or by the rising
edge of E1, respectively.
Data retention is guaranteed down
to 2 V. With the exception of E2, all
inputs consist of NOR gates, so
that no pull-up/pull-down resistors
are required. This gate circuit
allows to achieve low power
standby requirements by activation
with TTL-levels too.
If the circuit is inactivated by E2 =
L, the standby current (TTL) drops
to 150
μ
A typ.
8192 x 8 bit static CMOS RAM
70 ns Access Time
Common data inputs and outputs
Three-state outputs
Typ. operating supply current:
30 mA
TTL/CMOS-compatible
Automatic reduction of power
dissipation in long Read or Write
cycles
Power supply voltage 5 V
Operating temperature ranges
-40 to 125
°
C
Quality assessment according to
CECC 90000, CECC 90100 and
CECC 90111
ESD protection > 2000 V
(MIL STD 883C M3015.7)
Latch-up immunity > 100 mA
Packages: SOP28 (300 mil)
SOP28 (330 mil)
Pin Configuration
1
2
3
n.c.
A12
A7
VCC
W (WE)
E2 (CE2)
28
27
26
4
5
6
7
8
9
10
11
A6
A5
A4
A3
A2
A1
A0
A8
A9
A11
G (OE)
A10
E1 (CE1)
DQ7
DQ6
25
24
23
22
21
20
19
18
12
13
14
DQ1
DQ2
VSS
DQ5
DQ4
DQ3
17
16
15
DQ0
SOP
Pin Description
Signal Name
Signal Description
A0 - A12
DQ0 - DQ7
Address Inputs
Data In/Outputs
Chip Enable 1
Chip Enable 2
Output Enable
Read/Write Enable
Power Supply Voltage
Ground
not connected
E1
E2
G
W
VCC
VSS
n.c.
Top View
Automotive 8K x 8 SRAM
Features
Description
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相關代理商/技術參數 |
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| U6264AS1C07 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:STANDARD 8K X 8 SRAM |
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| U6264AS1C10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:STANDARD 8K X 8 SRAM |
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