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參數資料
| 型號： | W25P010A |
| 廠商： | WINBOND ELECTRONICS CORP |
| 英文描述： | 32K×32 Burst Pipeline High-Speed CMOS Static RAM(32K×32位同步脈沖式管高速CMOS靜態RAM) |
| 中文描述： | 32K的管道爆裂× 32高速CMOS靜態RAM（32K的× 32位同步脈沖式管高速的CMOS靜態RAM）的 |
| 文件頁數： | 7/17頁 |
| 文件大?。?/td> | 314K |
| 代理商： | W25P010A |
W25P010A
Publication Release Date: September 1996
- 7 -
Revision A7
Operating Characteristics
(V
DD
/V
DDQ
= 3.15V to 3.6V, V
SS
/V
SSQ
= 0V, T
A
= 0 to 70
°
C)
PARAMETER
SYM.
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Input Low Voltage
V
IL
-
-0.5
-
+0.8
V
Input High Voltage
V
IH
-
+2.0
-
V
DD
+0.3
V
Input Leakage Current
I
LI
V
IN
= V
SSQ
to V
DDQ
-10
-
+10
μ
A
μ
A
Output Leakage
Current
I
LO
V
I/O
= V
SSQ
to V
DDQ,
and data
I/O pins in high-Z state defined
in truth table
-10
-
+ 10
Output Low Voltage
V
OL
I
OL
= +8.0 mA
-
-
0.4
V
Output High Voltage
V
OH
I
OH
= -4.0 mA
2.4
-
-
V
Operating Current
I
DD
T
CYC
≥
min., I/O = 0 mA
Unselected mode defined in
truth table, V
IN
, V
IO
= V
IH (min.)
/V
IL (max.)
T
CYC
≥
min.
Unselected mode defined in
truth table,V
IN
= V
DD
-
0.2V/0.2V
T
CYC
≥
min
ZZ mode, T
CYC
≥
min.
-
-
250
mA
Standby Current
I
SBT
-
-
80
mA
I
SBC
-
-
10
mA
ZZ Mode Current
I
ZZ
-
-
1
mA
Note: Typical characteristics are measured at V
DD
= 3.3V, T
A
= 25
°
C.
CAPACITANCE
(V
DD
= 3.3V, T
A
= 25
°
C, f = 1 MHz)
PARAMETER
SYM.
CONDITIONS
MAX.
UNIT
Input Capacitance
C
IN
V
IN
= 0V
6
pF
Input/Output Capacitance
C
I/O
V
OUT
= 0V
8
pF
Note: These parameters are sampled but not 100% tested.
AC CHARACTERISTICS
AC Test Conditions
PARAMETER
CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Level
Output Load
0V to 3V
2 nS
1.5V
C
L
= 30 pF, I
OH
/I
OL
= -4 mA/8 mA
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