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參數(shù)資料
| 型號(hào)： | 70V659S10DR |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | SRAM |
| 英文描述： | 128K X 36 DUAL-PORT SRAM, 10 ns, PQFP208 |
| 封裝： | 28 X 28 MM, 3.50 MM HEIGHT, PLASTIC, QFP-208 |
| 文件頁數(shù)： | 3/24頁 |
| 文件大小： | 316K |
| 代理商： | 70V659S10DR |
11
IDT70V659/58/57S
High-Speed 3.3V 128/64/32K x 36 Asynchronous Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range(5)
NOTES:
1. Transition is measured 0mV from Low or High-impedance voltage with Output Test Load (Figure 2).
2. This parameter is guaranted by device characterization, but is not production tested.
3. To access RAM, CE= VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. Either condition must be valid for the entire tEW time.
4. The specification for tDH must be met by the device supplying write data to the RAM under all operating conditions. Although tDH and tOW values will vary over voltage
and temperature, the actual tDH will always be smaller than the actual tOW.
5. These values are valid regardless of the power supply level selected for I/O and control signals (3.3V/2.5V). See page 6 for details.
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage(5)
Symbol
Parameter
70V659/58/57S10
Com'l Only
70V659/58/57S12
Com'l
& Ind
70V659/58/57S15
Com'l
& Ind
Unit
Min.
Max.
Min.
Max.
Min.
Max.
READ CYCLE
tRC
Read Cycle Time
10
____
12
____
15
____
ns
tAA
Address Access Time
____
10
____
12
____
15
ns
tACE
Chip Enable Access Time(3)
____
10
____
12
____
15
ns
tABE
Byte Enable Access Time(3)
____
5
____
6
____
7ns
tAOE
Output Enable Access Time
____
5
____
6
____
7ns
tOH
Output Hold from Address Change
3
____
3
____
3
____
ns
tLZ
Output Low-Z Time(1,2)
0
____
0
____
0
____
ns
tHZ
Output High-Z Time(1,2)
04
0608
ns
tPU
Chip Enable to Power Up Time(2)
0
____
0
____
0
____
ns
tPD
Chip Disable to Power Down Time(2)
____
10
____
10
____
15
ns
tSOP
Semaphore Flag Update Pulse (OE or SEM)
____
4
____
6
____
8ns
tSAA
Semaphore Address Access Time
3
10
3
12
3
20
ns
4869 tbl 12
Symbol
Parameter
70V659/58/57S10
Com'l Only
70V659/58/57S12
Com'l
& Ind
70V659/58/57S15
Com'l
& Ind
Unit
Min.
Max.
Min.
Max.
Min.
Max.
WRITE CYCLE
tWC
Write Cycle Time
10
____
12
____
15
____
ns
tEW
Chip Enable to End-of-Write(3)
8
____
10
____
12
____
ns
tAW
Address Valid to End-of-Write
8
____
10
____
12
____
ns
tAS
Address Set-up Time(3)
0
____
0
____
0
____
ns
tWP
Write Pulse Width
8
____
10
____
12
____
ns
tWR
Write Recovery Time
0
____
0
____
0
____
ns
tDW
Data Valid to End-of-Write
6
____
8
____
10
____
ns
tDH
Data Hold Time(4)
0
____
0
____
0
____
ns
tWZ
Write Enable to Output in High-Z(1,2)
____
4
____
4
____
4ns
tOW
Output Active from End-of-Write(1,2,4)
0
____
0
____
0
____
ns
tSWRD
SEM
Flag Write to Read Time
5
____
5
____
5
____
ns
tSPS
SEM
Flag Contention Window
5
____
5
____
5
____
ns
4869 tbl 13
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 70V659S10DRG | 功能描述:IC SRAM 4MBIT 208QFP 制造商:idt, integrated device technology inc 系列:* 零件狀態(tài):在售 標(biāo)準(zhǔn)包裝:6 |
| 70V659S12BC | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Async Dual 3.3V 4.5M-Bit 128K x 36 12ns 256-Pin CABGA Tray 制造商:Integrated Device Technology Inc 功能描述:SRAM ASYNC DUAL 3.3V 4.5MBIT 128KX36 12NS 256BGA - Rail/Tube 制造商:Integrated Device Technology Inc 功能描述:128Kx36 STD-PWR 3.3V DUAL-PORT RAM |
| 70V659S12BC8 | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Async Dual 3.3V 4.5M-Bit 128K x 36 12ns 256-Pin CABGA T/R 制造商:Integrated Device Technology Inc 功能描述:SRAM ASYNC DUAL 3.3V 4.5MBIT 128KX36 12NS 256BGA - Tape and Reel 制造商:Integrated Device Technology Inc 功能描述:128Kx36 STD-PWR 3.3V DUAL-PORT RAM |
| 70V659S12BCGI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 128Kx36 STD-PWR 3.3V DUAL-PORT RAM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 70V659S12BCI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 128Kx36 STD-PWR 3.3V DUAL-PORT RAM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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