- 您現在的位置：買賣IC網 > PDF目錄250212 > 70V659S10DR (INTEGRATED DEVICE TECHNOLOGY INC) 128K X 36 DUAL-PORT SRAM, 10 ns, PQFP208 PDF資料下載
參數資料
| 型號： | 70V659S10DR |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | SRAM |
| 英文描述： | 128K X 36 DUAL-PORT SRAM, 10 ns, PQFP208 |
| 封裝： | 28 X 28 MM, 3.50 MM HEIGHT, PLASTIC, QFP-208 |
| 文件頁數： | 6/24頁 |
| 文件大?。?/td> | 316K |
| 代理商： | 70V659S10DR |
IDT70V659/58/57S
High-Speed 3.3V 128/64/32K x 36 Asynchronous Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
14
Timing Waveform of Semaphore Read after Write Timing, Either Side(1)
NOTES:
1. DOR = DOL = VIL, CEL = CER = VIH. Refer to Truth Table II for appropriate BE controls.
2. All timing is the same for left and right ports. Port "A" may be either left or right port. "B" is the opposite from port "A".
3. This parameter is measured from R/W"A" or SEM"A" going HIGH to R/W"B" or SEM"B" going HIGH.
4. If tSPS is not satisfied,the semaphore will fall positively to one side or the other, but there is no guarantee which side will be granted the semaphore flag.
Timing Waveform of Semaphore Write Contention(1,3,4)
NOTES:
1. CE = VIH for the duration of the above timing (both write and read cycle) (Refer to Chip Enable Truth Table). Refer also to Truth Table II for appropriate BE controls.
2. "DATAOUT VALID" represents all I/O's (I/O0 - I/O35) equal to the semaphore value.
SEM/BEn(1)
4869 drw 10
tAW
tEW
I/O
VALID ADDRESS
tSAA
R/
W
tWR
tOH
tACE
VALID ADDRESS
DATA
VALID
IN
DATAOUT
tDW
tWP
tDH
tAS
tSWRD
tAOE
Read Cycle
Write Cycle
A0-A2
OE
VALID(2)
tSOP
SEM"A"
4869 drw 11
tSPS
MATCH
R/
W"A"
MATCH
A0"A"-A2"A"
SIDE
"A"
(2)
SEM"B"
R/
W"B"
A0"B"-A2"B"
SIDE
"B"
(2)
相關PDF資料 |
PDF描述 |
|---|---|
| 7P12FLV262C25 | 6M X 16 FLASH 3V PROM CARD, 250 ns, XMA68 |
| 7P12FLV520I15 | 6M X 16 FLASH 3V PROM CARD, 150 ns, XMA68 |
| 7P24FLV251I25 | 12M X 16 FLASH 3V PROM CARD, 250 ns, XMA68 |
| 7P24FLV280I15 | 12M X 16 FLASH 3V PROM CARD, 150 ns, XMA68 |
| 7P24FLV570I25 | 12M X 16 FLASH 3V PROM CARD, 250 ns, XMA68 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 70V659S10DRG | 功能描述:IC SRAM 4MBIT 208QFP 制造商:idt, integrated device technology inc 系列:* 零件狀態:在售 標準包裝:6 |
| 70V659S12BC | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Async Dual 3.3V 4.5M-Bit 128K x 36 12ns 256-Pin CABGA Tray 制造商:Integrated Device Technology Inc 功能描述:SRAM ASYNC DUAL 3.3V 4.5MBIT 128KX36 12NS 256BGA - Rail/Tube 制造商:Integrated Device Technology Inc 功能描述:128Kx36 STD-PWR 3.3V DUAL-PORT RAM |
| 70V659S12BC8 | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Async Dual 3.3V 4.5M-Bit 128K x 36 12ns 256-Pin CABGA T/R 制造商:Integrated Device Technology Inc 功能描述:SRAM ASYNC DUAL 3.3V 4.5MBIT 128KX36 12NS 256BGA - Tape and Reel 制造商:Integrated Device Technology Inc 功能描述:128Kx36 STD-PWR 3.3V DUAL-PORT RAM |
| 70V659S12BCGI | 功能描述:靜態隨機存取存儲器 128Kx36 STD-PWR 3.3V DUAL-PORT RAM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 70V659S12BCI | 功能描述:靜態隨機存取存儲器 128Kx36 STD-PWR 3.3V DUAL-PORT RAM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
發布緊急采購，3分鐘左右您將得到回復。