- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄250212 > 71V3577YS80PF (INTEGRATED DEVICE TECHNOLOGY INC) 128K X 36 CACHE SRAM, 8 ns, PQFP100 PDF資料下載
參數(shù)資料
| 型號： | 71V3577YS80PF |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | SRAM |
| 英文描述： | 128K X 36 CACHE SRAM, 8 ns, PQFP100 |
| 封裝： | 14 X 20 MM, PLASTIC, TQFP-100 |
| 文件頁數(shù)： | 17/22頁 |
| 文件大小： | 621K |
| 代理商： | 71V3577YS80PF |
6.42
4
IDT71V3577YS_79YS, IDT71V3577YSA_79YSA, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
100 Pin TQFP Capacitance
(TA = +25° C, f = 1.0mhz)
RecommendedOperating
Temperature Supply Voltage
Absolute Maximum Ratings(1)
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. VDD terminals only.
3. VDDQ terminals only.
4. Input terminals only.
5. I/O terminals only.
6. This is a steady-state DC parameter that applies after the power supplies have
ramped up. Power supply sequencing is not necessary; however, the voltage
on any input or I/O pin cannot exceed VDDQ during power supply ramp up.
7.
TA is the "instant on" case temperature.
Recommended DC Operating
Conditions
NOTES:
1. VIH (max) = VDDQ + 1.0V for pulse width less than tCYC/2, once per cycle.
2. VIL (min) = -1.0V for pulse width less than tCYC/2, once per cycle.
NOTE:
1. This parameter is guaranteed by device characterization, but not production tested.
Symbol
Rating
Commercial &
Industrial Values
Unit
VTERM(2)
Terminal Voltage with
Respect to GND
-0.5 to +4.6
V
VTERM(3,6)
Terminal Voltage with
Respect to GND
-0.5 to VDD
V
VTERM(4,6)
Terminal Voltage with
Respect to GND
-0.5 to VDD +0.5
V
VTERM(5,6)
Terminal Voltage with
Respect to GND
-0.5 to VDDQ +0.5
V
TA(7)
Commercial
Operating Temperature
-0 to +70
oC
Industrial
Operating Temperature
-40 to +85
oC
TBIAS
Temperature
Under Bias
-55 to +125
oC
TSTG
Storage
Temperature
-55 to +125
oC
PT
Power Dissipation
2.0
W
IOUT
DC Output Current
50
mA
6450 tbl 03
Grade
Temperature(1)
VSS
VDD
VDDQ
Commercial
0°C to +70°C
0V
3.3V±5%
Industrial
-40°C to +85°C
0V
3.3V±5%
6450 tbl 04
Symbol
Parameter
Min.
Typ.
Max.
Unit
VDD
Core Supply Voltage
3.135
3.3
3.465
V
VDDQ
I/O Supply Voltage
3.135
3.3
3.465
V
VSS
Supply Voltage
0
V
VIH
Input High Voltage - Inputs
2.0
____
VDD +0.3
V
VIH
Input High Voltage - I/O
2.0
____
VDDQ +0.3(1)
V
VIL
Input Low Voltage
-0.3(2)
____
0.8
V
6450 tbl 06
Symbol
Parameter(1)
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 3dV
5
pF
CI/O
I/O Capacitance
VOUT = 3dV
7
pF
6450 tbl 07
NOTES:
1. TA is the "instant on" case temperature.
119 BGA Capacitance
(TA = +25° C, f = 1.0mhz)
Symbol
Parameter(1)
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 3dV
7
pF
CI/O
I/O Capacitance
VOUT = 3dV
7
pF
6450 tbl 07a
165 fBGA Capacitance
(TA = +25° C, f = 1.0mhz)
Symbol
Parameter(1)
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 3dV
7
pF
CI/O
I/O Capacitance
VOUT = 3dV
7
pF
6450 tbl 07b
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 7P24FLV270C15 | 12M X 16 FLASH 3V PROM CARD, 150 ns, XMA68 |
| 7P24FLV561I15 | 12M X 16 FLASH 3V PROM CARD, 150 ns, XMA68 |
| 7P2FLV511I15 | 1M X 16 FLASH 3V PROM CARD, 150 ns, XMA68 |
| 7P6FLV221C15 | 3M X 16 FLASH 3V PROM CARD, 150 ns, XMA68 |
| 7P12FLV212I15 | 6M X 16 FLASH 3V PROM CARD, 150 ns, XMA68 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 71V3577YS85PFG | 功能描述:IC SRAM 4.5MBIT 8.5NS 100TQFP 制造商:idt, integrated device technology inc 系列:- 包裝:托盤 零件狀態(tài):過期 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:4.5M（128K x 36） 速度:8.5ns 接口:并聯(lián) 電壓 - 電源:3.135 V ~ 3.465 V 工作溫度:0°C ~ 70°C（TA） 封裝/外殼:100-LQFP 供應(yīng)商器件封裝:100-TQFP（14x20） 標(biāo)準(zhǔn)包裝:72 |
| 71V3578S133PF | 制造商:Integrated Device Technology Inc 功能描述:SRAM CHIP SYNC SINGLE 3.3V 4.5M-BIT 256K X 18 4.2NS - Trays 制造商:Integrated Device Technology Inc 功能描述:IDT 71V3578S133PF, SRAM Chip Sync Single 3.3V 4.5M-Bit 256K x 18 4.2ns 100-Pin TQFP |
| 71V3578S133PFG | 功能描述:靜態(tài)隨機(jī)存取存儲器 256Kx18 SYNC 3.3V FLOW-THROUGH 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 71V3578S133PFG8 | 功能描述:靜態(tài)隨機(jī)存取存儲器 256Kx18 SYNC 3.3V FLOW-THROUGH 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 71V3578S133PFGI | 功能描述:靜態(tài)隨機(jī)存取存儲器 256Kx18 SYNC 3.3V FLOW-THROUGH 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。