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參數(shù)資料
| 型號： | 71V3577YS80PF |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | SRAM |
| 英文描述： | 128K X 36 CACHE SRAM, 8 ns, PQFP100 |
| 封裝： | 14 X 20 MM, PLASTIC, TQFP-100 |
| 文件頁數(shù)： | 3/22頁 |
| 文件大?。?/td> | 621K |
| 代理商： | 71V3577YS80PF |
6.42
11
IDT71V3577YS_79YS, IDT71V3577YSA_79YSA, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
Linear Burst Sequence Table ( LBO=VSS)
Synchronous Write Function Truth Table (1, 2)
Asynchronous Truth Table (1)
Interleaved Burst Sequence Table ( LBO=VDD)
NOTES:
1. L = VIL, H = VIH, X = Don’t Care.
2.
BW3 and BW4 are not applicable for the IDT71V3579.
3. Multiple bytes may be selected during the same cycle.
NOTES:
1. L = VIL, H = VIH, X = Don’t Care.
2. Synchronous function pins must be biased appropriately to satisfy operation requirements.
NOTE:
1. Upon completion of the Burst sequence the counter wraps around to its initial state.
NOTE:
1. Upon completion of the Burst sequence the counter wraps around to its initial state.
Operation
GW
BWE
BW1
BW2
BW3
BW4
Read
H
XXXX
Read
H
L
HHHH
Write all Bytes
L
XXXXX
Write all Bytes
H
LLLLL
Write Byte 1(3)
H
L
HHH
Write Byte 2(3)
HL
H
Write Byte 3(3)
HL
H
L
H
Write Byte 4(3)
H
L
HHH
L
6450 tbl 12
Operation(2)
OE
ZZ
I/O Status
Power
Read
L
Data Out
Active
Read
H
L
High-Z
Active
Write
X
L
High-Z – Data In
Active
Deselected
X
L
High-Z
Standby
Sleep Mode
X
H
High-Z
Sleep
6450 tbl 13
Sequence 1
Sequence 2
Sequence 3
Sequence 4
A1
A0
A1
A0
A1
A0
A1
A0
First Address
000
11
0
1
Second Address
0
1
0
1
0
Third Address
1
0
1
0
1
Fourth Address(1)
111
0
1
00
6450 tbl 14
Sequence 1
Sequence 2
Sequence 3
Sequence 4
A1
A0
A1
A0
A1
A0
A1
A0
First Address
000
11
0
1
Second Address
0
1
0
1
0
Third Address
1
0
1
0
1
Fourth Address(1)
11
000
1
0
6450 tbl 15
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| 71V3577YS85PFG | 功能描述:IC SRAM 4.5MBIT 8.5NS 100TQFP 制造商:idt, integrated device technology inc 系列:- 包裝:托盤 零件狀態(tài):過期 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:4.5M（128K x 36） 速度:8.5ns 接口:并聯(lián) 電壓 - 電源:3.135 V ~ 3.465 V 工作溫度:0°C ~ 70°C（TA） 封裝/外殼:100-LQFP 供應(yīng)商器件封裝:100-TQFP（14x20） 標準包裝:72 |
| 71V3578S133PF | 制造商:Integrated Device Technology Inc 功能描述:SRAM CHIP SYNC SINGLE 3.3V 4.5M-BIT 256K X 18 4.2NS - Trays 制造商:Integrated Device Technology Inc 功能描述:IDT 71V3578S133PF, SRAM Chip Sync Single 3.3V 4.5M-Bit 256K x 18 4.2ns 100-Pin TQFP |
| 71V3578S133PFG | 功能描述:靜態(tài)隨機存取存儲器 256Kx18 SYNC 3.3V FLOW-THROUGH 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 71V3578S133PFG8 | 功能描述:靜態(tài)隨機存取存儲器 256Kx18 SYNC 3.3V FLOW-THROUGH 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 71V3578S133PFGI | 功能描述:靜態(tài)隨機存取存儲器 256Kx18 SYNC 3.3V FLOW-THROUGH 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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