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參數資料
| 型號： | FGA25N120ANTD |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 1200V NPT Trench IGBT |
| 中文描述： | 50 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | TO-3P, 3 PIN |
| 文件頁數： | 5/9頁 |
| 文件大小： | 867K |
| 代理商： | FGA25N120ANTD |
5
www.fairchildsemi.com
FGA25N120ANTD Rev. B
F
Typical Performance Characteristics
(Continued)
Figure 7. Capacitance Characteristics
Figure 8. Turn-On Characteristics vs. Gate
Resistance
Figure 9. Turn-Off Characteristics vs.
Gate Resistance
Figure 10. Switching Loss vs. Gate Resistance
Figure 11. Turn-On Characteristics vs.
Collector Current
Figure 12. Turn-Off Characteristics vs.
Collector Current
0
10
20
30
40
50
60
70
10
100
Common Emitter
V
CC
= 600V, V
GE
=
±
15V
I
C
= 25A
T
C
= 25
°
C
T
C
= 125
°
C
td(on)
tr
S
Gate Resistance, R
G
[
]
1
10
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
Ciss
Coss
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25
°
C
Crss
C
Collector-Emitter Voltage, V
CE
[V]
0
10
20
30
40
50
60
70
1
10
Common Emitter
V
CC
= 600V, V
GE
=
±
15V
I
C
= 25A
T
C
= 25
°
C
T
C
= 125
°
C
Eon
Eoff
S
Gate Resistance, R
G
[
]
0
10
20
30
40
50
60
70
10
100
1000
Common Emitter
V
CC
= 600V, V
GE
=
±
15V
I
C
= 25A
T
C
= 25
°
C
T
C
= 125
°
C
td(off)
tf
S
Gate Resistance, R
G
[
]
10
20
30
40
50
100
Common Emitter
V
GE
=
±
15V, R
G
= 10
T
C
= 25
°
C
T
C
= 125
°
C
tr
td(on)
S
Collector Current, I
C
[A]
10
20
30
40
50
100
Common Emitter
V
GE
=
±
15V, R
G
= 10
T
C
= 25
°
C
T
C
= 125
°
C
td(off)
tf
S
Collector Current, I
C
[A]
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FGA25N120ANTD_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:1200V NPT Trench IGBT |
| FGA25N120ANTD_F109 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:1200V NPT Trench IGBT |
| FGA25N120ANTDTU | 功能描述:IGBT 晶體管 Copak Discrete RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGA25N120ANTDTU_F109 | 功能描述:IGBT 晶體管 Copak Discrete RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGA25N120ANTDTUX | 制造商:Fairchild Semiconductor Corporation 功能描述:Transistor IGBT N-Ch 1.2KV 50A TO-3P(N) |
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