- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375860 > FMM5829X (SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.) K-Band Power Amplifier MMIC PDF資料下載
參數(shù)資料
| 型號： | FMM5829X |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | K-Band Power Amplifier MMIC |
| 中文描述： | K波段單片功率放大器 |
| 文件頁數(shù)： | 13/14頁 |
| 文件大小： | 264K |
| 代理商： | FMM5829X |
13
K-Band Power Amplifier MMIC
FMM5829X
■
DIE ATTACH
1) The die-attach station must have accurate temperature control and an inert forming gas should
be used.
2) Chips should be kept at room temperature except during die-attach.
3) Place package or carrier on the heated stage.
4) Lightly grasp the chip edges by the longer side using tweezers.
Die attach conditions
Stage Temperature : 300 to 310 deg.C
Time : less than 15 seconds
AuSn Preform Volume : per next Figure
■
WIRE BONDING
The bonding equipment must be properly grounded. The following or equivalent equipment, tools,
materials, and conditions are recommended.
1) Bonding Equipment and Bonding Tool.
Bonding Equipment : West Bond Model 7400 (Manual Bonder)
Bonding Tool : CCOD-1/16-S-437-60-F-2010-MP (Deweyl)
2) Bonding Wire
Material : Hard or Half hard gold
Diameter : 0.7 to 1.0 mil
3) Bonding Conditions
Method : Thermal Compression Bonding with Ultrasonic Power
Tool Force : 0.196 N ± 0.0196 N
Stage Temperature : 215 deg.C ± 5 deg.C
Tool Heater : None
Ultrasonic Power Transmitter : West Bond Model 1400
Duration : 150 mS/Bond
0
500
1000
1500
2000
2500
0
2
4
6
8
10
12
14
16
18
20
Area of Chip Bach Surface (mm^2)
V
-
/
3
)
FMM5829X
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FMM6G30US60 | Compact & Complex Module |
| FMM6G50US60 | Compact & Complex Module |
| FMM7G30US60N | Compact & Complex Module |
| FMMD2838 | SOT23 SILICON PLANAR HIGH SPEED SWITCHING COMMON CATHODE DIODE PAIR |
| FMMD6100 | SOT23 SILICON PLANAR HIGH SPEED SWITCHING COMMON CATHODE DIODE PAIR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FMM60-02TF | 功能描述:MOSFET PHASE LEG MOSFET MOD HALF-BRIDGE 33V 33A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FMM65-015P | 功能描述:分立半導體模塊 65 Amps 150V RoHS:否 制造商:Infineon Technologies 產(chǎn)品:Thyristor Power Modules 類型:Phase Controls 安裝風格:Screw 封裝 / 箱體:DT61 封裝: |
| FMM6G20US60 | 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FMM6G20US60S | 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FMM6G30US60 | 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
發(fā)布緊急采購，3分鐘左右您將得到回復。