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參數資料
型號: HY29F080G-12
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: x8 Flash EEPROM
中文描述: 1M X 8 FLASH 5V PROM, 120 ns, PDSO44
封裝: PLASTIC, SOP-44
文件頁數: 4/38頁
文件大小: 366K
代理商: HY29F080G-12
4
Rev. 6.1/May 01
HY29F080
CONVENTIONS
Unless otherwise noted, a positive logic (active
High) convention is assumed throughout this docu-
ment, whereby the presence at a pin of a higher,
more positive voltage (nominally 5VDC) causes
assertion of the signal. A
#
symbol following the
signal name, e.g., RESET#, indicates that the sig-
nal is asserted in a Low state (nominally 0 volts).
Whenever a signal is separated into numbered
bits, e.g., DQ[7], DQ[6], ..., DQ[0], the family of
bits may also be shown collectively, e.g., as
DQ[7:0].
The designation 0xNNNN (N = 0, 1, 2, . . . , 9, A, .
. . , E, F) indicates a number expressed in hexa-
decimal notation. The designation 0bXXXX indi-
cates a number expressed in binary notation (X =
0, 1).
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SIGNAL DESCRIPTIONS
MEMORY ARRAY ORGANIZATION
The 1 MByte Flash memory array is organized into
sixteen 64 KByte blocks called
sectors
(S0, S1, . .
. , S15). A sector is the smallest unit that can be
erased. Adjacent pairs of sectors (S0/S1, S2/S3,
. . . , S14/S15) are designated as a
sector group
.
A sector group is the smallest unit which can be
protected to prevent accidental or unauthorized
erasure. See
Bus Operations
and
Command
Definitions
sections of this document for additional
information on these functions.
Table 1 defines the sector addresses, sector group
addresses and corresponding address ranges for
the HY29F080.
相關PDF資料
PDF描述
HY29F080T90 8 Megabit (1M x 8), 5 Volt-only, Flash Memory
HY29F080G-70 x8 Flash EEPROM
HY29F080G-90 x8 Flash EEPROM
HY29F080R-12 x8 Flash EEPROM
HY29F080R-70 x8 Flash EEPROM
相關代理商/技術參數
參數描述
HY29F080G-12E 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
HY29F080G-15 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
HY29F080G-15E 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
HY29F080G-15I 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
HY29F080G-55E 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
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