- 您現在的位置：買賣IC網 > PDF目錄360984 > IS42LS81600A-7TI 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM PDF資料下載
參數資料
| 型號： | IS42LS81600A-7TI |
| 英文描述： | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| 中文描述： | 16Meg × 8，8Meg x16 |
| 文件頁數： | 24/66頁 |
| 文件大小： | 556K |
| 代理商： | IS42LS81600A-7TI |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁當前第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁
ISSI
24
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
ADVANCED INFORMATION
Rev. 00A
06/01/02
IS42S81600A, IS42S16800A, IS42S32400A
IS42LS81600A, IS42LS16800A, IS42LS32400A
FUNCTIONAL DESCRIPTION
The 128Mb SDRAMs are quad-bank DRAMs which operate
at 2.5V or 3.3V and include a synchronous interface (all
signals are registered on the positive edge of the clock
signal, CLK). Each of the 16,777,216-bit banks is organized
as 4,096 rows by 256 columns by 16 bits.
Read and write accesses to the SDRAM are burst oriented;
accesses start at a selected location and continue for a
programmed number of locations in a programmed
sequence. Accesses begin with the registration of an AC-
TIVE command which is then followed by a READ or WRITE
command. The address bits registered coincident with the
ACTIVE command are used to select the bank and row to
be accessed
(BA0 and BA1 select the bank, A0-A11 select the row)
.
The address bits
(A0-A7)
registered coincident with the READ
or WRITE command are used to select the starting column
location for the burst access.
Prior to normal operation, the SDRAM must be initialized.
The following sections provide detailed information covering
device initialization, register definition, command
descriptions and device operation.
Initialization
SDRAMs must be powered up and initialized in a
predefined manner.
The 128M SDRAM is initialized after the power is applied to
V
DD
and Vddq (simultaneously) and the clock is stable.
A 200μs delay is required prior to issuing any command
other than a
COMMAND INHIBIT
or a
NOP
. The COMMAND
INHIBIT or NOP may be applied during the 100us period and
should continue at least through the end of the period.
With at least one COMMAND INHIBIT or NOP command
having been applied, a PRECHARGE command should be
applied once the 100μs delay has been satisfied. All banks
must be precharged. This will leave all banks in an idle state
where two
AUTO REFRESH
cycles must be performed. After
the
AUTO REFRESH
cycles are complete, the SRDRAM s then
ready for mode register programming.
The mode register and extended mode registers should be
loaded prior to applying any operational command because
it will power up in an unknown state.
相關PDF資料 |
PDF描述 |
|---|---|
| IS42S16800A | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S16800A-7B | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S16800A-7BI | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S16800A-7T | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S16800A-7TI | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IS42R16100E-7TL | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS42R16320D-7BL | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS42R16320D-7BLI | 制造商:Integrated Silicon Solution Inc 功能描述:DRAM Chip SDRAM 512M-Bit 32Mx16 2.5V 54-Pin TFBGA |
| IS42RM16160D-7BL | 功能描述:動態隨機存取存儲器 256M (16Mx16) 143MHz Mobile S動態隨機存取存儲器, 2.5v RoHS:否 制造商:ISSI 數據總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS42RM16160D-7BLI | 功能描述:動態隨機存取存儲器 256M (16Mx16) 143MHz Mobile S動態隨機存取存儲器, 2.5v RoHS:否 制造商:ISSI 數據總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。