欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號： IS42S32400A-10TI
廠商： INTEGRATED SILICON SOLUTION INC
元件分類： DRAM
英文描述： CABLE ASSEMBLY; BNC MALE TO BNC FEMALE BULKHEAD; 50 OHM, RG174A/U COAX; ; *USES STANDARD 50 OHM INTERFACE CONNECTORS*
中文描述： 4M X 32 SYNCHRONOUS DRAM, 7 ns, PDSO86
封裝： PLASTIC, TSOP2-86
文件頁數： 19/66頁
文件大?。?/td> 556K
代理商： IS42S32400A-10TI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
ADVANCED INFORMATION
Rev. 00A
06/01/02
19
ISSI
IS42S81600A, IS42S16800A, IS42S32400A
IS42LS81600A, IS42LS16800A, IS42LS32400A
DC ELECTRICAL CHARACTERISTICS
(Recommended Operation Conditions unless otherwise noted.)
Symbol
I
IL
Parameter
Input Leakage Current
Test Condition
0V
≤
V
IN
≤
V
DD
, with pins other than
the tested pin at 0V
Output s disabled, 0V
≤
V
OUT
≤
V
DD
I
OUT
= –2 mA
I
OUT
= +2 mA
One Bank Operation,
Burst Length=1
t
RC
≥
t
RC
(min.)
I
OUT
= 0mA
Speed
Min.
–5
Max.
5
Unit
μA
I
OL
V
OH
V
OL
I
DD1
Output Leakage Current
Output High Voltage Level
Output Low Voltage Level
Operating Current
(1,2)
–5
2.4
—
5
—
0.4
μA
V
V
CAS
atency = 3
Com.
Ind.
Com.
Ind.
Com.
Ind.
Com.
Ind.
-7
-7
-10
-10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
120
140
110
120
1
1
.6
.6
11
5
7
4
6
3
5
28
17
20
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
I
DD2P
Precharge Standby Current
CKE
≤
V
IL
(
MAX
)
t
CK
= t
CK
(
MIN
)
I
DD2PS
(In Power-Down Mode)
t
CK
=
∞
I
DD2N
I
DD2NS
Precharge Standby Current
(In Non Power-Down Mode)
CKE
≥
V
IH
(
MIN
)
t
CK
= t
CK
(
MIN
)
t
CK
=
∞
Com.
Ind.
Com.
Ind.
Com.
Ind.
I
DD3P
Active Standby Current
CKE
≤
V
IL
(
MAX
)
t
CK
= t
CK
(
MIN
)
Ind.
t
CK
=
∞
I
DD3PS
(In Power-Down Mode)
I
DD3N
I
DD3NS
Active Standby Current
(In Non Power-Down Mode)
CKE
≥
V
IH
(
MIN
)
t
CK
= t
CK
(
MIN
)
t
CK
=
∞
Com.
Ind.
I
DD4
Operating Current
(In Burst Mode)
(1)
t
CK
= t
CK
(
MIN
)
I
OUT
= 0mA
CAS
atency = 3
Com.
Ind.
Com.
Ind.
-7
-7
-10
-10
—
—
—
—
120
140
110
120
mA
mA
mA
mA
CAS
atency = 2
Com.
Ind.
Com.
Ind.
-7
-7
-10
-10
—
—
—
—
90
110
80
100
mA
mA
mA
mA
Notes:
1. These are the values at the minimum cycle time. Since the currents are transient, these values decrease as the cycle time
increases. Also note that a bypass capacitor of at least 0.01 μF should be inserted between Vdd and Vss for each memory
chip to suppress power supply voltage noise (voltage drops) due to these transient currents.
2. Idd
1
and Idd
4
depend on the output load. The maximum values for Idd
1
and Idd
4
are obtained with the output open state.
相關PDF資料
PDF描述
IS42S32400A-10TL CABLE ASSEMBLY; SMA MALE RIGHT ANGLE TO; SMA FEMALE BULKHEAD; 50 OHM, PE-SR405FL (.085" RE-SHAPABLE); 18" CABLE LENGTH;
IS42S32400A-10TLI 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800A 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800A-6T 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800A-6TL 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
相關代理商/技術參數
參數描述
IS42S32400A-10TL 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S32400A-10TLI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S32400A-6T 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S32400A-6TL 制造商:Integrated Silicon Solution Inc 功能描述:
IS42S32400A-6T-TR 制造商:Integrated Silicon Solution Inc 功能描述:DRAM Chip SDRAM 128M-Bit 4Mx32 3.3V 86-Pin TSOP-II T/R
發布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發布成功！您可以繼續發布采購。也可以進入我的后臺，查看報價

發布成功！您可以繼續發布采購。也可以進入我的后臺，查看報價

*型號 *數量 廠商 批號 封裝
添加更多采購

我的聯系方式

*
*
*
主站蜘蛛池模板： 商洛市| 麻江县| 石景山区| 清水县| 平武县| 滨州市| 吴忠市| 凌云县| 尖扎县| 高雄县| 曲阳县| 新竹县| 深水埗区| 中牟县| 依安县| 商水县| 娱乐| 宜阳县| 南昌市| 华阴市| 南宁市| 中牟县| 泊头市| 景德镇市| 澄江县| 定结县| 隆尧县| 武隆县| 深水埗区| 昌吉市| 龙胜| 容城县| 东宁县| 江都市| 内乡县| 集贤县| 大安市| 焦作市| 库伦旗| 兴文县| 赤水市|