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參數資料
| 型號： | MBM30LV0128-PFTR |
| 廠商： | FUJITSU LTD |
| 元件分類： | DRAM |
| 英文描述： | 128 M (16 M X 8) BIT NAND-type |
| 中文描述： | 16M X 8 FLASH 2.7V PROM, PDSO48 |
| 封裝： | PLASTIC, REVERSE, TSOP-48 |
| 文件頁數： | 1/43頁 |
| 文件大小： | 397K |
| 代理商： | MBM30LV0128-PFTR |
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DS05-20878-3E
FUJITSU SEMICONDUCTOR
DATA SHEET
FLASH MEMORY
CMOS
64M (8M
×
8) BIT NAND-type
MBM30LV0064
I
DESCRIPTION
The MBM30LV0064 device is a single 3.3 V 8M
×
8 bit NAND flash memory organized as 528 byte
×
16 pages
×
1024 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to
store ECC code(Specifications indecated are on condition that ECC system would be combined.). Program and
read data is transferred between the memory array and page register in 528 byte increments. A 528 byte page
can be programmed in 200
μ
s and an 8K byte block can be erased in 2 ms under typical conditions. An internal
controller automates all program and erase operations including the verification of data margins. Data within a
page can be read with a 50 ns cycle time per byte. The I/O pins are utilized for both address and data input/
output as well as command inputs. The MBM30LV0064 is an ideal solution for applications requiring mass non-
volatile storage such as solid state file storage, digital recording, image file memory for still cameras, and other
uses which require high density and non-volatile storage.
I
PRODUCT LINE UP
I
PACKAGES
Part No.
MBM30LV0064
Operating Temperature
–40°C to +85°C
V
CC
+2.7 V to +3.6 V
Power Dissipation (Max.)
Read
72 mW
Erase / Program
72 mW
TTL Standby
3.6 mW
CMOS Standby
0.18 mW
Marking Side
Marking Side
(FPT-44P-M07)
(Normal Bend)
(FPT-44P-M08)
(Reverse Bend)
44-pin plastic TSOP (II)
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