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參數(shù)資料
| 型號(hào)： | MRF377 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-860C3, CASE 375G-04, 5 PIN |
| 文件頁(yè)數(shù)： | 11/11頁(yè) |
| 文件大?。?/td> | 804K |
| 代理商： | MRF377 |
5-80
Freescale Semiconductor
Wireless RF Product Device Data
MRF377 MRF377R3 MRF377R5
TYPICAL DVBT OFDM BROADBAND CHARACTERISTICS
900
9
19
420
65
40
18
35
17
30
16
25
15
20
14
40
13
45
12
50
11
55
10
60
480
540
600
660
720
780
840
f, FREQUENCY (MHz)
Figure 9. Single-Channel DVBT OFDM
Broadband Performance
G
ps
,POWER
GAIN
(dB)
,DRAIN
EFFICIENCY
(%)
η
ACPR,
ADJACENT
CHANNEL
POWER
RA
TIO
η
Gps
ACPR
VDD = 32 Vdc, Pout = 45 W (Avg.), IDQ = 2000 mA
8K Mode DVBT OFDM
64 QAM Data Carrier Modulation
5 Symbols
50
16
19
2
Pout, OUTPUT POWER (WATTS) AVG.
Figure 10. Single-Channel DVBT OFDM Broadband
Performance Power Gain versus Output Power
G
ps
,POWER
GAIN
(dBc)
30
10
46
8
18.5
18
17.5
17
16.5
470 MHz
VDD = 32 Vdc, IDQ = 2000 mA
8K Mode OFDM
64 QAM Data Carrier Modulation
5 Symbols
660 MHz
560 MHz
860 MHz
760 MHz
100
0
30
470 MHz
Pout, OUTPUT POWER (WATTS) AVG.
Figure 11. Single-Channel DVBT OFDM
Broadband Performance Drain Efficiency versus
Output Power
,DRAIN
EFFICIENCY
(%)
η
VDD = 32 Vdc
IDQ = 2000 mA
8K Mode OFDM
64 QAM Data Carrier Modulation
5 Symbols
10
25
20
15
10
5
660 MHz
560 MHz
860 MHz
760 MHz
100
68
56
10
470 MHz
Pout, OUTPUT POWER (WATTS) AVG.
Figure 12. Single-Channel DVBT OFDM Broadband Performance
Adjacent Channel Power Ratio versus Output Power
ACPR,
ADJACENT
CHANNEL
POWER
RA
TIO
(dBc)
VDD = 32 Vdc
IDQ = 2000 mA
8K Mode DVBT OFDM
64 QAM
Data Carrier Modulation
5 Symbols
58
60
62
64
66
660 MHz
860 MHz
560 MHz
760 MHz
5
20
5
7.61 MHz
f, FREQUENCY (MHz)
Figure 13. 8K Mode DVBT OFDM Spectrum
30
40
50
90
70
80
100
110
60
4
3
2
1
0
1
2
3
4
4 kHz BW
(dB)
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| MRF377R3 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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| MRF571T1 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MPS571T1 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AA |
| MRF5P20180HR6 | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF377HR3 | 功能描述:射頻MOSFET電源晶體管 250W 860MHZ 32V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF377HR3_09 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF377HR5 | 功能描述:射頻MOSFET電源晶體管 250W 860MHZ 32V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF377R3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR |
| MRF377R5 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR |
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