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參數資料
| 型號： | MRF377 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-860C3, CASE 375G-04, 5 PIN |
| 文件頁數： | 4/11頁 |
| 文件大小： | 804K |
| 代理商： | MRF377 |
MRF377 MRF377R3 MRF377R5
5-73
Freescale Semiconductor
Wireless RF Product Device Data
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics (1)
Drain-Source Breakdown Voltage
(VGS = 0 Vdc, ID =10 A)
V(BR)DSS
65
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 32 Vdc, VGS = 0 Vdc)
IDSS
—
1
Adc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
1
Adc
On Characteristics (1)
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 A)
VGS(th)
—
2.8
—
Vdc
Gate Quiescent Voltage
(VDS = 32 Vdc, ID = 225 mA)
VGS(Q)
—
3.5
—
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 3 A)
VDS(on)
—
0.27
—
Vdc
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Crss
—
3.2
—
pF
Functional Characteristics (In DVBT OFDM Single-Channel, Narrowband Fixture, 50 ohm system) (2)
Common Source Power Gain
(VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2 x 1000 mA,
f = 860 MHz)
Gps
16.5
18.2
—
dB
Drain Efficiency
(VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2 x 1000 mA,
f = 860 MHz)
η
21
22.9
—
%
Adjacent Channel Power Ratio
(VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2 x 1000 mA,
f = 860 MHz)
ACPR
—
-59.2
-57
dBc
Typical Characteristics (In DVBT OFDM Single-Channel, Broadband Fixture, 50 ohm system) (2)
Common Source Power Gain
(VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2 x 1000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
Gps
—
17.6
17.4
16.8
—
dB
Drain Efficiency
(VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2 x 1000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
η
—
23.5
25.8
23.0
22.7
21.3
—
%
Adjacent Channel Power Ratio
(VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2 x 1000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
ACPR
—
-59.3
-58.7
-58.1
—
dBc
1. Each side of device measured separately.
2. Measured in push-pull configuration.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF377HR3 | 功能描述:射頻MOSFET電源晶體管 250W 860MHZ 32V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF377HR3_09 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF377HR5 | 功能描述:射頻MOSFET電源晶體管 250W 860MHZ 32V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF377R3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR |
| MRF377R5 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR |
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