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參數(shù)資料
| 型號(hào)： | PBSS3540M |
| 英文描述： | 40 V. 0.5 A PNP low VCEsat (BISS) transistor |
| 中文描述： | 40伏，0.5安PNP型低飽和壓降（BISS）晶體管 |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大小： | 67K |
| 代理商： | PBSS3540M |
2003 Jul 22
3
Philips Semiconductors
Product specification
15 V, 0.5 A
PNP low V
CEsat
(BISS) transistor
PBSS3515M
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1.
2.
Refer to SOT883 standard mounting conditions.
Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint, with 60
μ
m
copper strip line.
Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
3.
THERMAL CHARACTERISTICS
Notes
1.
2.
Refer to SOT883 standard mounting conditions.
Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint, with 60
μ
m
copper strip line.
Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
Operated under pulsed conditions: duty cycle
δ ≤
20%, pulse width t
p
≤
30 ms.
3.
4.
Soldering
Reflow soldering is the only recommended soldering method.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
15
15
6
500
1
100
250
430
+150
150
+150
UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
open emitter
open base
open collector
notes 1 and 2
65
65
V
V
V
mA
A
mA
mW
mW
°
C
°
C
°
C
T
amb
≤
25
°
C; notes 1 and 2
T
amb
≤
25
°
C; note 1 and 3
T
stg
T
j
T
amb
storage temperature
junction temperature
operating ambient temperature
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to
ambient
in free air; notes 1 and 2
in free air; notes 1, 3 and 4
500
290
K/W
K/W
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| PBSS3540M T/R | 功能描述:兩極晶體管 - BJT TRANS BISS TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PBSS3540M,315 | 功能描述:兩極晶體管 - BJT TRANS BISS TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PBSS3540MB | 制造商:NXP Semiconductors 功能描述:TRANS PNP 40V 0.5A SOT883B 制造商:NXP Semiconductors 功能描述:TRANS, PNP, 40V, 0.5A, SOT883B 制造商:NXP Semiconductors 功能描述:TRANS, PNP, 40V, 0.5A, SOT883B; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency Typ ft:300MHz; Power Dissipation Pd:250mW; DC Collector Current:-500mA; DC Current Gain hFE:40; Operating ;RoHS Compliant: Yes |
| PBSS3540MB,315 | 功能描述:兩極晶體管 - BJT 40 V, 0.5 A PNP low VCEsat transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PBSS4021NT | 制造商:NXP Semiconductors 功能描述:TRANSISTORNPN20V4.3ASOT23 制造商:NXP Semiconductors 功能描述:TRANSISTOR,NPN,20V,4.3A,SOT23 |
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