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參數(shù)資料
| 型號： | PHC20512 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Complementary enhancement mode MOS transistors |
| 中文描述： | 6400 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 5/20頁 |
| 文件大小： | 158K |
| 代理商： | PHC20512 |
1997 Oct 22
5
Philips Semiconductors
Product specification
Complementary enhancement mode
MOS transistors
PHC20512
THERMAL CHARACTERISTICS
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
20
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
Per channel
V
(BR)DSS
drain-source breakdown voltage
N-channel
P-channel
gate-source threshold voltage
N-channel
P-channel
drain-source leakage current
N-channel
P-channel
gate leakage current
N-channel
P-channel
drain-source on-state resistance
N-channel
V
GS
= 0; I
D
= 10
μ
A
V
GS
= 0; I
D
=
10
μ
A
30
30
V
V
V
GSth
V
GS
= V
DS
; I
D
= 1 mA
V
GS
= V
DS
; I
D
=
1 mA
1
1
2.8
2.8
V
V
I
DSS
V
GS
= 0; V
DS
= 24 V
V
GS
= 0; V
DS
=
24 V
V
GS
=
±
20 V; V
DS
= 0
100
100
nA
nA
I
GSS
±
100
±
100
nA
nA
R
DSon
V
GS
= 4.5 V; I
D
= 1.6 A
V
GS
= 10 V; I
D
= 3.2 A
V
GS
=
4.5 V; I
D
=
1 A
V
GS
=
10 V; I
D
=
2 A
0.1
0.05
0.25
0.12
P-channel
C
iss
input capacitance
N-channel
P-channel
output capacitance
N-channel
P-channel
reverse transfer capacitance
N-channel
P-channel
total gate charge
N-channel
P-channel
gate-source charge
N-channel
P-channel
V
GS
= 0; V
DS
= 24 V; f = 1 MHz
V
GS
= 0; V
DS
=
24 V; f = 1 MHz
450
450
pF
pF
C
oss
V
GS
= 0; V
DS
= 24 V; f = 1 MHz
V
GS
= 0; V
DS
=
24 V; f = 1 MHz
200
200
pF
pF
C
rss
V
GS
= 0; V
DS
= 24 V; f = 1 MHz
V
GS
= 0; V
DS
=
24 V; f = 1 MHz
100
100
pF
pF
Q
G
V
GS
= 10 V; V
DD
= 15 V; I
D
= 3.2 A
V
GS
=
10 V; V
DD
=
15 V; I
D
=
2 A
15
13
nC
nC
Q
GS
V
GS
= 10 V; V
DD
= 15 V; I
D
= 3.2 A
V
GS
=
10 V; V
DD
=
15 V; I
D
=
2 A
1
1
nC
nC
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