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參數資料
| 型號： | PHC20512 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Complementary enhancement mode MOS transistors |
| 中文描述： | 6400 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 封裝： | SO-8 |
| 文件頁數： | 9/20頁 |
| 文件大小： | 158K |
| 代理商： | PHC20512 |
1997 Oct 22
9
Philips Semiconductors
Product specification
Complementary enhancement mode
MOS transistors
PHC20512
Fig.8
Capacitance as a function of drain-source
voltage; N-channel typical values.
handbook, halfpage
(pF)
0
4
8
12
16
VDS (V)
20
0
1000
750
500
250
MGG343
(1)
(2)
(3)
V
GS
= 0; f = 1 MHz; T
j
= 25
°
C.
(1) C
iss
.
(2) C
oss
.
(3) C
rss
.
Fig.9
Capacitance as a function of drain source
voltage; P-channel typical values.
handbook, halfpage
(pF)
0
4
8
12
16
20
0
1000
750
500
250
MGG352
VDS (V)
(1)
(2)
(3)
V
GS
= 0; f = 1 MHz; T
j
= 25
°
C.
(1) C
iss
.
(2) C
oss
.
(3) C
rss
.
Fig.10 Output characteristics; N-channel
typical values.
handbook, halfpage
0
4
8
12
0
20
10
MGG344
ID
(A)
VDS (V)
(4)
(5)
(6)
(1)
(2)
(3)
T
amb
= 25
°
C; t
p
= 80
μ
s;
δ
= 0.
(1) V
GS
= 10 V.
(2) V
GS
= 5 V.
(3) V
GS
= 4.5 V.
(4) V
GS
= 4 V.
(5) V
GS
= 3.5 V.
(6) V
GS
= 3 V.
Fig.11 Output characteristics; P-channel
typical values.
handbook, halfpage
ID
(A)
0
4
8
12
0
12
8
4
MGG353
VDS (V)
(4)
(5)
(6)
(1)
(2)
(3)
T
amb
= 25
°
C; t
p
= 80
μ
s;
δ
= 0.
(1) V
GS
=
10 V.
(2) V
GS
=
5 V.
(3) V
GS
=
4.5 V.
(4) V
GS
=
4 V.
(5) V
GS
=
3.5 V.
(6) V
GS
=
3 V.
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