- 您現在的位置：買賣IC網 > PDF目錄382392 > PHN110 (NXP SEMICONDUCTORS) N-channel enhancement mode MOS transistor PDF資料下載
參數資料
| 型號： | PHN110 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel enhancement mode MOS transistor |
| 中文描述： | 4 A, 30 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SO-8 |
| 文件頁數： | 3/12頁 |
| 文件大小： | 79K |
| 代理商： | PHN110 |
1997 Jun 17
3
Philips Semiconductors
Product specification
N-channel enhancement mode
MOS transistor
PHN110
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1.
2.
3.
4.
T
s
is the temperature at the soldering point of the drain lead.
Pulse width and duty cycle limited by maximum junction temperature.
Value based on a printed-circuit board with a R
th a-tp
(ambient to tie-point) of 27.5 K/W.
Value based on a printed-circuit board with a R
th a-tp
(ambient to tie-point) of 90 K/W.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
V
GS
I
D
I
DM
P
tot
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
65
65
30
±
20
4
16
2.8
2.4
1.1
+150
+150
V
V
A
A
W
W
W
°
C
°
C
T
s
= 80
°
C; note 1
note 2
T
s
= 80
°
C
T
amb
= 25
°
C; note 3
T
amb
= 25
°
C; note 4
T
stg
T
j
storage temperature
operating junction temperature
Source-drain diode
I
S
I
SM
source current (DC)
peak pulsed source current
T
s
= 80
°
C
note 2
3.5
14
A
A
Fig.2 Power derating curve.
handbook, halfpage
0
4
2
0
50
100
200
Ptot
(W)
MBG848
150Ts (
o
C)
Fig.3 SOAR.
δ
= 0.01; T
S
= 80
°
C.
(1) R
DSon limitation
.
handbook, halfpage
ID
(A)
MBG750
tp
T
P
t
tp
T
δ
=
1 ms
10 ms
100 ms
100
μ
s
DC
(1)
tp =
10
μ
s
10
2
10
1
1
10
2
10
1
1
VDS (V)
10
10
2
相關PDF資料 |
PDF描述 |
|---|---|
| PHN205 | Dual N-channel enhancement mode MOS transistor |
| PHP119NQ06T | N-channel TrenchMOS standard level FET |
| PHB119NQ06T | N-channel TrenchMOS standard level FET |
| PHP130N03LT | TrenchMOS transistor Logic level FET |
| PHP152NQ03LT | TrenchMOS logic level FET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| PHN110T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 4A I(D) | SO |
| PHN15-4.1 | 制造商:Power-One 功能描述: |
| PHN203 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual N-channel TrenchMOS logic level FET |
| PHN203 /T3 | 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHN203,518 | 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。