- 您現在的位置：買賣IC網 > PDF目錄192296 > S29GL016A10FAI020 (SPANSION LLC) 1M X 16 FLASH 3V PROM, 100 ns, PBGA64 PDF資料下載
參數資料
| 型號： | S29GL016A10FAI020 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 1M X 16 FLASH 3V PROM, 100 ns, PBGA64 |
| 封裝： | 13 X 11 MM, FBGA-64 |
| 文件頁數： | 48/95頁 |
| 文件大小： | 3585K |
| 代理商： | S29GL016A10FAI020 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁當前第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁第91頁第92頁第93頁第94頁第95頁
52
S29GL-A
S29GL-A_00_A12 May 21, 2008
Da ta
Sh e e t
9.
Command Definitions
Writing specific address and data commands or sequences into the command register initiates device
operations. Table 10.2 on page 61 and Table 10.1 on page 62 define the valid register command sequences.
Writing incorrect address and data values or writing them in the improper sequence may place the device in
an unknown state. A reset command is then required to return the device to reading array data.
All addresses are latched on the falling edge of WE# or CE#, whichever happens later. All data is latched on
the rising edge of WE# or CE#, whichever happens first. Refer to AC Characteristics on page 72 for timing
diagrams.
9.1
Reading Array Data
The device is automatically set to reading array data after device power-up. No commands are required to
retrieve data. The device is ready to read array data after completing an Embedded Program or Embedded
Erase algorithm.
After the device accepts an Erase Suspend command, the device enters the erase-suspend-read mode, after
which the system can read data from any non-erase-suspended sector. After completing a programming
operation in the Erase Suspend mode, the system may once again read array data with the same exception.
See Erase Suspend/Erase Resume Commands on page 60 for more information.
The system must issue the reset command to return the device to the read (or erase-suspend-read) mode if
DQ5 goes high during an active program or erase operation, or if the device is in the autoselect mode. See
Reset Command on page 52 for more information.
See also Requirements for Reading Array Data in Device Bus Operations on page 22 for more information.
The Read-Only Operations–AC Characteristics on page 72 provide the read parameters, and Figure 16.2
on page 74 shows the timing diagram.
9.2
Reset Command
Writing the reset command resets the device to the read or erase-suspend-read mode. Address bits are don’t
cares for this command.
The reset command may be written between the sequence cycles in an erase command sequence before
erasing begins. This resets the device to the read mode. Once erasure begins, however, the device ignores
reset commands until the operation is complete.
The reset command may be written between the sequence cycles in a program command sequence before
programming begins. This resets the device to the read mode. If the program command sequence is written
while the device is in the Erase Suspend mode, writing the reset command returns the device to the erase-
suspend-read mode. Once programming begins, however, the device ignores reset commands until the
operation is complete.
The reset command may be written between the sequence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command must be written to return to the read mode. If the device
entered the autoselect mode while in the Erase Suspend mode, writing the reset command returns the device
to the erase-suspend-read mode.
If DQ5 goes high during a program or erase operation, writing the reset command returns the device to the
read mode (or erase-suspend-read mode if the device was in Erase Suspend).
Note that if DQ1 goes high during a Write Buffer Programming operation, the system must write the Write-to-
Buffer-Abort Reset command sequence to reset the device for the next operation.
相關PDF資料 |
PDF描述 |
|---|---|
| S29GL032A10TAIR10 | 64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY |
| S29GL032A10TAIR12 | 64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY |
| S29GL032A10TAIR13 | 64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY |
| S29GL032A10TAIR20 | 64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY |
| S29GL032A10TAIR22 | 64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY |
相關代理商/技術參數 |
參數描述 |
|---|---|
| S29GL016A10FAIR10 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL016A10FAIR12 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL016A10FAIR13 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL016A10FAIR20 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:S29GL-A MirrorBit Flash Family |
| S29GL016A10FAIR22 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
發布緊急采購，3分鐘左右您將得到回復。