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參數(shù)資料
型號: S29GL016A10FAI020
廠商: SPANSION LLC
元件分類: PROM
英文描述: 1M X 16 FLASH 3V PROM, 100 ns, PBGA64
封裝: 13 X 11 MM, FBGA-64
文件頁數(shù): 76/95頁
文件大小: 3585K
代理商: S29GL016A10FAI020
78
S29GL-A
S29GL-A_00_A12 May 21, 2008
Da ta
Sh e e t
Notes
1. Not 100% tested.
3. For 1–16 words/1–32 bytes programmed.
4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation.
5. If a program suspend command is issued within tPOLL, the device requires tPOLL before reading status data, once programming resumes
(that is, the program resume command is written). If the suspend command was issued after tPOLL, status data is available immediately
after programming resumes. See Figure 16.5 on page 79
Table 16.7 Erase and Program Operations-S29GL016A Only
Parameter
Description
Speed Options
Unit
JEDEC
Std.
90
10
tAVAV
tWC
Write Cycle Time (Note 1)
Min
90
100
ns
tAVWL
tAS
Address Setup Time
Min
0
ns
tASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
tWLAX
tAH
Address Hold Time
Min
45
ns
tAHT
Address Hold Time From CE# or OE# high during toggle bit
polling
Min
0
ns
tDVWH
tDS
Data Setup Time
Min
35
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tCEPH
CE# High during toggle bit polling
Min
20
ns
tOEPH
OE# High during toggle bit polling
Min
20
ns
tGHWL
Read Recovery Time Before Write (OE# High to WE# Low)
Min
0
ns
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
35
ns
tWHDL
tWPH
Write Pulse Width High
Min
30
ns
tWHWH1
Write Buffer Program Operation (Note 2, 3)
Typ
240
s
Single Word Program Operation (Note 2)
Typ
60
Accelerated Single Word Program Operation (Note 2)
Typ
54
tWHWH2
Sector Erase Operation (Note 2)
Typ
0.5
sec
tVHH
VHH Rise and Fall Time (Note 1)
Min
250
ns
tVCS
VCC Setup Time (Note 1)
Min
50
s
tBUSY
WE# High to RY/BY# Low
Max
90
100
ns
tPOLL
Program Valid before Status Polling
Max
4
s
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL016A10FAIR10 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL016A10FAIR12 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL016A10FAIR13 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL016A10FAIR20 制造商:SPANSION 制造商全稱:SPANSION 功能描述:S29GL-A MirrorBit Flash Family
S29GL016A10FAIR22 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
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