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參數資料
型號: S29GL016A10FAI020
廠商: SPANSION LLC
元件分類: PROM
英文描述: 1M X 16 FLASH 3V PROM, 100 ns, PBGA64
封裝: 13 X 11 MM, FBGA-64
文件頁數: 61/95頁
文件大小: 3585K
代理商: S29GL016A10FAI020
64
S29GL-A
S29GL-A_00_A12 May 21, 2008
Da ta
Sh e e t
Figure 10.3 Data# Polling Algorithm
Notes
1. VA = Valid address for programming. During a sector erase operation, a valid address is any sector address within the sector being
erased. During chip erase, a valid address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = 1 because DQ7 may change simultaneously with DQ5.
10.5
RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin which indicates whether an Embedded Algorithm is in
progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command
sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a
pull-up resistor to VCC.
If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the
Erase Suspend mode.) If the output is high (Ready), the device is in the read mode, the standby mode, or in
the erase-suspend-read mode. Table 10.2 on page 68 shows the outputs for RY/BY#.
DQ7 = Data?
Yes
No
DQ5 = 1?
No
Yes
FAIL
PASS
Read DQ15–DQ0
Addr = VA
Read DQ15–DQ0
Addr = VA
DQ7 = Data?
START
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相關代理商/技術參數
參數描述
S29GL016A10FAIR10 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL016A10FAIR12 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL016A10FAIR13 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL016A10FAIR20 制造商:SPANSION 制造商全稱:SPANSION 功能描述:S29GL-A MirrorBit Flash Family
S29GL016A10FAIR22 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
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