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參數資料
| 型號： | TS83102G0BMGS |
| 廠商： | E2V TECHNOLOGIES PLC |
| 元件分類： | ADC |
| 英文描述： | 1-CH 10-BIT PROPRIETARY METHOD ADC, PARALLEL ACCESS, CBGA152 |
| 封裝： | 21 X 21 MM, 1.27 MM PITCH, HERMETIC SEALED, CERAMIC, CGA-152 |
| 文件頁數： | 8/54頁 |
| 文件大小： | 2622K |
| 代理商： | TS83102G0BMGS |
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16
0935B–BDC–06/08
TS83102G0BMGS
e2v semiconductors SAS 2008
5.
Thermal and Moisture Characteristics
5.1
Dissipation by Conduction and Convection
The thermal resistance from junction to ambient RTH
JA is around 30°C/W. Therefore, to lower RTHJA, it
is mandatory to use an external heat sink to improve dissipation by convection and conduction. The heat
sink should be fixed in contact with the top side of the package (AI203 isolation over CuW heat
spreader).
The heat sink does not need to be electrically isolated, because the top of the package is already electri-
cally isolated thanks to a 0.30 mm AI203 layer.
Example:
The thermal resistance from case to ambient RTH
CA is typically 4.0°C/W (0 m/s air flow or still air)
with the heat sink depicted in Figure 5-1 on page 17, of dimensions 50 mm x 50 mm x 28 mm
(respectively L x l x H).
The global junction to ambient thermal resistance RTH
JA is:
–4.8
°C/W RTH
JC + 2.0°C/W thermal grease resistance + 4.0°C/W RTHCA (case to ambient) =
10.8
°C/W total (RTH
JA).
Assuming:
A typical thermal resistance from the junction to the top of the case RTH
JC of 4.35°C/W (finite ele-
ment method thermal simulation results): this value does not include the thermal contact resistance
between the package and the external heat sink (glue, paste, or thermal foil interface, for example).
As an example, use a 2.0
°C/W value for a
50 m thickness of thermal grease.
Note:
Example of the calculation of the ambient temperature TA max to ensure TJ max = 110°C:
assuming RTH
JA = 10.8°C/W and power dissipation = 4.6 W, TA max = TJ - (RTHJA x 4.6 W) = 110 - (10.8
x 4.6) = 60.32
°C. T
A max can be increased by lowering RTHJA with an adequate air flow ( 2 m/s, for
example).
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