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參數資料
| 型號： | UBA2030T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Full bridge driver IC(整橋驅動器芯片) |
| 中文描述： | 0.32 A FULL BRDG BASED MOSFET DRIVER, PDSO24 |
| 封裝： | 7.50 MM, PLASTIC, SOT-137-1, SO-24 |
| 文件頁數： | 10/20頁 |
| 文件大小： | 94K |
| 代理商： | UBA2030T |
1999 Aug 10
10
Philips Semiconductors
Preliminary specification
Full bridge driver IC
UBA2030T
I
o(source)
output source current
V
DD
= V
FSL
= V
FSR
= 15 V;
V
GHR
= V
GHL
= V
GLR
= V
GLL
= 0 V
V
DD
= V
FSL
= V
FSR
= 15 V;
V
GHR
= V
GHL
= V
GLR
= V
GLL
= 15 V
V
FSR
= V
FSL
= 15 V
140
190
240
mA
I
o(sink)
output sink current
200
260
320
mA
I
FSL(float)
;
I
FSR(float)
Internal oscillator;
notes 2 and 3
floating supply current
15
μ
A
f
bridge
f
osc
/
T
bridge oscillating frequency
oscillator frequency
dependency with respect to
temperature
oscillator frequency
dependency with respect to
V
DD
HIGH-level trip point
LOW-level trip point
oscillator constant
EXO pin connected to SGND
fixed RC;
T =
40
°
C to +150
°
C
50
0
50000
10
Hz
%
f
osc
/
V
DD
fixed RC;
V
DD
= 12 to 16 V
0
10
%
k
H
k
L
k
osc
V
RCH
= k
H
×
V
DD
V
RCL
= k
L
×
V
DD
0.67
2.34
0.71
0.01
2.49
0.75
2.64
External oscillator;
note 2
f
osc(ext)
external oscillator frequency RC pin connected to SGND;
100
100000 Hz
V
IH
HIGH-level input voltage
4.5
V
DD
V
V
IL
LOW-level input voltage
0
0.5
V
I
i(EXO)
Dead time control;
notes 2 and 4
input current
0
50
μ
A
t
dead
dead time control range
(adjusted externally)
dead time variable
0.4
4
μ
s
k
DT
Bridge enable;
notes 2 and 5
R
DT
= k
DT
×
t
dead
70 k
180
270
380
k
/
μ
s
I
IH
HIGH-level input current;
note 6
bridge enable active
V
BE
V
BER
= 5 V
bridge enable not active
I
IH
= 100
μ
A
100
0
1.1
700
20
μ
A
mA
μ
A
I
IL
V
BE
V
BER
LOW-level input current
threshold voltage
with reference to HV
with reference to PGND
2.1
3.5
2.6
5.5
3.0
7.5
V
V
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
f
bridge
k
osc
R
osc
×
C
osc
×
(
)
----------------------1
=
f
bridge
f
------2
=
V
---------t
5 V/ms
>
V
---------t
5 V/ms
>
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