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參數(shù)資料
| 型號(hào)： | UBA2030T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Full bridge driver IC(整橋驅(qū)動(dòng)器芯片) |
| 中文描述： | 0.32 A FULL BRDG BASED MOSFET DRIVER, PDSO24 |
| 封裝： | 7.50 MM, PLASTIC, SOT-137-1, SO-24 |
| 文件頁數(shù)： | 8/20頁 |
| 文件大小： | 94K |
| 代理商： | UBA2030T |
1999 Aug 10
8
Philips Semiconductors
Preliminary specification
Full bridge driver IC
UBA2030T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1.
This value is guaranteed down to T
j
=
25
°
C. From T
j
=
25 to
40
°
C, the voltage on pin HV is limited to 530 V and
the floating supply voltage (V
FSL
, V
FSR
) is limited to a maximum value of 548 V.
In accordance with the human body model: equivalent to discharging a 100 pF capacitor through a 1.5 k
series
resistor.
2.
THERMAL CHARACTERISTICS
QUALITY SPECIFICATION
In accordance with “SNW-FQ-611 part E” The numbers of the quality specification can be found in the “Quality
Reference Handbook”
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DD
V
HV
V
FSL
; V
FSR
supply voltage (low voltage)
supply voltage (high voltage)
floating supply voltage
0
0
570
0
10
18
570
588
18
+570
V
V
V
V
V
note 1
V
SHL
= V
SHR
= 570 V, note 1
V
SHL
= V
SHR
= 0 V
with reference to PGND and SGND
V
SHL
; V
SHR
source voltage for higher right and left
MOSFETs
V
PGND
power ground voltage
V
i(BER)
bridge enable reference input voltage
V
i(BE)
bridge enable control input voltage
with reference to SGND
7
0
570
0
0
0
+10
570
580
10
700
V
DD
V
V
V
V
μ
A
V
V
i(BER)
= 570 V
V
i(BER)
= 0 V
I
i(BE)
V
i(EXO)
bridge enable control input current
input voltage from external oscillator
on pin EXO
shut-down input voltage on pin SD
slew rate at output pins
junction temperature
ambient temperature
storage temperature
electrostatic handling
pin HV
pins BE, BER, FSL, GHL, SHL,
SHR, GHR and FSR
V
SD
SR
T
j
T
amb
T
stg
V
es
0
4
40
40
55
V
DD
+4
+150
+150
+150
V
V/ns
°
C
°
C
°
C
repetitive
note 2
±
1250
±
1500
V
V
SYMBOL
PARAMETER
VALUE
UNIT
R
th(j-a)
thermal resistance from junction to ambient
70
K/W
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