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參數資料
| 型號： | UBA2030T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Full bridge driver IC(整橋驅動器芯片) |
| 中文描述： | 0.32 A FULL BRDG BASED MOSFET DRIVER, PDSO24 |
| 封裝： | 7.50 MM, PLASTIC, SOT-137-1, SO-24 |
| 文件頁數： | 11/20頁 |
| 文件大?。?/td> | 94K |
| 代理商： | UBA2030T |
1999 Aug 10
11
Philips Semiconductors
Preliminary specification
Full bridge driver IC
UBA2030T
Notes
1.
2.
3.
4.
5.
6.
The current into pin HV is internally limited to 15 mA at T
j
= 25
°
C and to 10 mA at T
j
= 150
°
C.
V
DD
= 15 V.
The bridge frequency can be calculated using Equation (1).
The ‘dead time’ is adjusted using an external resistor; see Equation (2).
This function is disabled when using an external oscillator.
I
IH
< 2.1 mA when the condition is V
BE
V
BER
= 5 V at T
j
= 150
°
C.
Shut-down;
note 2
V
IH
HIGH-level input voltage
shut-down active;
4.5
V
DD
V
V
IL
LOW-level input voltage
shut-down not active;
V
0
0.5
V
I
i(SD)
input current
0
50
μ
A
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
t
--------------
5 V/ms
>
-------t
5 V/ms
>
Design equations
B
RIDGE COMMUTATION FREQUENCY
The internal
÷
2 circuit requires the frequency of the
internal or external oscillator to be twice the bridge
frequency. When the internal oscillator is used, the bridge
frequency can be adjusted using an external resistor and
capacitor:
R
osc
C
osc
×
×
(1)
Where:
R
osc(min)
= 200 k
R
osc(max)
= 2 M
(with low leakage current).
D
EAD TIME
R
DT
(2)
The ‘dead time’ (t
dead
) can be adjusted using an external
resistor (R
DT
) connected between DTC and SGND:
Units are k
for R
DT
and
μ
s for t
dead
.
Where:
R
DT(min)
= 50 k
R
DT(max)
= 1 M
.
f
bridge
2.8
=
270
t
dead
70
–
×
=
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| UBA2032T/N2,118 | 功能描述:功率驅動器IC HID RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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