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參數資料
| 型號： | UBA2030T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Full bridge driver IC(整橋驅動器芯片) |
| 中文描述： | 0.32 A FULL BRDG BASED MOSFET DRIVER, PDSO24 |
| 封裝： | 7.50 MM, PLASTIC, SOT-137-1, SO-24 |
| 文件頁數： | 15/20頁 |
| 文件大小： | 94K |
| 代理商： | UBA2030T |
1999 Aug 10
15
Philips Semiconductors
Preliminary specification
Full bridge driver IC
UBA2030T
Additional application information
The UBA2030T is the commutator part in a complete
system for driving an HID lamp. The life of the HID lamp
can depend on the amount of sodium that migrates
through its quartz wall. To minimize this migration, the
lamp must be operated negative with respect to system
ground.
Figure 7 shows a full bridge with an HID lamp in a typical
automotive configuration using a control unit referenced to
the high side of the bridge. Pin BER is connected to
system ground. The bridge can be held in its current state
by pin BE. The supply current to the internal low voltage
circuit is fed to pin HV which can be connected to either
system ground or to a low voltage DC supply, such as a
battery, as indicated by the dotted lines in Fig.7.
The diode in series with the supply to pin HV prevents C
i
being discharged if the lamp is shorted during the ignition
phase. C6 should be positioned as close as possible to
pin DTC. The control unit drives the MOSFETs relatively
hard which can cause radiation. To prevent switching the
MOSFETs hard, a resistor can be connected in series with
each gate.
In all applications, the voltage on pin HV must not be
allowed to become lower than the voltage at pin V
DD
during the start-up phase or during normal operation,
otherwise the full bridge will not operate correctly. During
the start-up phase, pin EXO and pin SD should both be
LOW. The voltage as a function of time at pin EXO and
pin SD should be >5 V/ms.
Fig.7 Automotive configuration (example 2).
handbook, full pagewidth
UBA2030T
SHR
GHR
FSR
VDD
SGND
HV
EXO
SD
DTC
SHL
GHL
FSL
PGND
GLR
BER
BE
RC
GLL
13
14
15
18
20
21
22
23
24
12
11
10
8
7
5
3
2
1
IGNITOR
LAMP
Ci
Ci
C3
C6
RDT
C2
C4
C1
LL
HL
C5
LR
HR
high voltage
570 V (max)
system
ground
CONTROL
UNIT
from
Cosc
Rosc
MGL763
C1 = 150 nF.
C2 = 150 nF.
C3 = 220 nF.
C6 = 100 pF.
C
osc
= 10 nF.
R
osc
= 147 k
.
R
DT
= 50 to 1000 k
(220 k
= a ‘dead time’ of 1
μ
s).
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相關代理商/技術參數 |
參數描述 |
|---|---|
| UBA2030T/N1,118 | 功能描述:功率驅動器IC UBA2030T/SO24/REEL13//N1 RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| UBA2030T/N1/N,118 | 功能描述:功率驅動器IC MOSFET DRVR 0.32A 4OUT Hi/Lo Full Brdg RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| UBA2032 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Full bridge driver IC |
| UBA2032T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Full bridge driver IC |
| UBA2032T/N2,118 | 功能描述:功率驅動器IC HID RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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