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參數資料
| 型號： | MCM64E918 |
| 廠商： | Motorola, Inc. |
| 英文描述： | 8M Bit synchronous late write fast static RAM(8M位同步遲寫快速靜態RAM) |
| 中文描述： | 晚8分位同步靜態隨機存儲器寫入速度（800萬位同步遲寫快速靜態內存） |
| 文件頁數： | 6/24頁 |
| 文件大?。?/td> | 503K |
| 代理商： | MCM64E918 |
MCM64E918
MCM64E836
6
MOTOROLA FAST SRAM
BURST SEQUENCES
Interleaved Burst
Address
Hex
Binary
SA1
SA0
SA1
SA0
SA1
SA0
SA1
SA0
Start — Base Address
0
1
2
3
0
0
0
1
1
0
1
1
2nd Address
1
0
3
2
0
1
0
0
1
1
1
0
3rd Address
2
3
0
1
1
0
1
1
0
0
0
1
4th Address
3
2
1
0
1
1
1
0
0
1
0
0
Linear Burst
Address
Hex
Binary
SA1
SA0
SA1
SA0
SA1
SA0
SA1
SA0
Start — Base Address
0
1
2
3
0
0
0
1
1
0
1
1
2nd Address
1
2
3
0
0
1
1
0
1
1
0
0
3rd Address
2
3
0
1
1
0
1
1
0
0
0
1
4th Address
3
0
1
2
1
1
0
0
0
1
1
0
ABSOLUTE MAXIMUM RATINGS
(See Note)
Rating
Symbol
Value
Unit
Power Supply Voltage Relative to VSS
Output Supply Voltage
VDD
VDDQ
Vin
VJTAG
Iin
Iout
TA
Tstg
–0.5 to 3.6
V
–0.5 to 2.5
V
Voltage On Any Pin Other Than JTAG
–0.5 to 2.5
V
Voltage On Any JTAG Pin
–0.5 to 3.0
V
Input Current (per I/O)
±
50
mA
Output Current (per I/O)
±
25
mA
Operating Temperature
0 to 70
°
C
Storage Temperature
–55 to 125
°
C
NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPER-
ATING CONDITIONS. Exposure to higher than recommended voltages for
extended periods of time could affect device reliability.
PBGA PACKAGE THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Notes
Junction to Ambient (Still Air)
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JB
R
θ
JC
50
°
C/W
1, 2
Junction to Ambient (@200 ft/min)
Single–Layer Board
39
°
C/W
1, 2
Junction to Ambient (@200 ft/min)
Four–Layer Board
27
°
C/W
3
Junction to Board (Bottom)
23
°
C/W
4
Junction to Case (Top)
1
°
C/W
5
NOTES:
1. Junction temperature is a function of on–chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient
temperature, air flow, power dissipation of other components on the board, and board thermal resistance.
2. Per SEMI G38–87.
3. Measured using a four–layer test board with two internal planes.
4. Indicates the average thermal resistance between the die and the printed circuit board as measured by the ring cold plate method.
5. Indicates the average thermal resistance between the die and the case top surface as measured by the cold plate method (MIL SPEC–883
Method 1012.1).
This device contains circuitry to protect the in-
puts against damage due to high static voltages
or electric fields; however, it is advised that
normal precautions be taken to avoid applica-
tion of any voltage higher than maximum rated
voltages to this high–impedance circuit.
This CMOS memory circuit has been
designed to meet the dc and ac specifications
shown in the tables, after thermal equilibrium
has been established. The circuit is in a test
socket or mounted on a printed circuit board and
transverse air flow of at least 500 linear feet per
minute is maintained.
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