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參數資料
| 型號： | MCM64E918 |
| 廠商： | Motorola, Inc. |
| 英文描述： | 8M Bit synchronous late write fast static RAM(8M位同步遲寫快速靜態RAM) |
| 中文描述： | 晚8分位同步靜態隨機存儲器寫入速度（800萬位同步遲寫快速靜態內存） |
| 文件頁數： | 7/24頁 |
| 文件大小： | 503K |
| 代理商： | MCM64E918 |
MCM64E918
MCM64E836
7
MOTOROLA FAST SRAM
DC OPERATING CONDITIONS AND CHARACTERISTICS
(2.375 V
≤
VDD
≤
2.625 V, 0
°
C
≤
TA
≤
70
°
C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS
(See Notes 1 through 4)
Parameter
Symbol
Min
Max
–3.0
Max
–3.3
Max
–4.0
Max
–4.4
Max
–5.0
Max
Unit
Notes
Core Power Supply Voltage
VDD
VDDQ
IDD1
2.375
—
—
—
—
—
2.625
V
Output Driver Supply Voltage
1.4
—
—
—
—
—
1.9
V
AC Supply Current (Device Selected,
All Outputs Open, Freq = Max,
VDD = Max, VDDQ = Max).
Includes Supply Currents for VDD.
Quiescent Active Power Supply Current
(Device Selected, All Outputs Open,
Freq = 0, VDD = Max, VDDQ = Max).
Includes supply currents for VDD.
Active Standby Power Supply Current
(Device Deselected, Freq = Max,
VDD = Max, VDDQ = Max)
—
—
720
700
680
660
640
—
mA
5
IDD2
—
200
200
200
200
200
—
mA
6
ISB1
—
225
220
210
205
200
—
mA
7
Stop Clock Current (Device
Deselected, Freq = 0, VDD = Max,
VDDQ = Max, All Inputs Static
at CMOS Levels)
ISB2
—
200
200
200
200
200
—
mA
6, 7
Input Reference DC Voltage
Vref (dc)
0.6
—
—
—
—
—
1.3
V
8
NOTES:
1. All data sheet parameters specified to full range of VDD unless otherwise noted. All voltages are referenced to voltage applied to VSS
bumps.
2. Supply voltage applied to VDD connections.
3. Supply voltage applied to VDDQ connections.
4. All power supply currents measured with outputs open or deselected.
5. All inputs are toggling per CMOS I/O levels (see Note 6).
6. Input levels for I/Os are VSS
≤
Vin
≤
0.2 V or VDDQ – 0.2 V
≤
Vin
≤
VDDQ.
7. Device deselected as defined by the Truth Table.
8. Although considerable latitude in the selection of the nominal dc value (i.e., rms value) of Vref is supported, the peak to peak ac component
superimposed on Vref may not exceed 5% of the dc component of Vref.
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