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參數資料
型號: N643GT5KI
廠商: Advanced Micro Devices, Inc.
英文描述: 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
中文描述: 64兆位(4個M x 16位)的CMOS 1.8伏,只有同時讀/寫,突發模式閃存
文件頁數: 26/49頁
文件大小: 382K
代理商: N643GT5KI
24
Am29BDS643G
25692A2 May 8, 2006
D A T A S H E E T
When the Embedded Erase algorithm is complete, the
bank returns to reading array data and addresses are
no longer latched. Note that while the Embedded Erase
operation is in progress, the system can read data from
the non-erasing bank. The system can determine the
status of the erase operation by reading DQ7 or DQ6/
DQ2 in the erasing bank. Refer to the Write Operation
Status section for information on these status bits.
Once the sector erase operation has begun, only the
Erase Suspend command is valid. All other commands
are ignored. However, note that a
hardware reset
immediately
terminates the erase operation. If that
occurs, the sector erase command sequence should
be reinitiated once that bank has returned to reading
array data, to ensure data integrity.
The host system may also initiate the sector erase
command sequence while the device is in the unlock
bypass mode. The command sequence is four cycles
cycles in length instead of six cycles.
Figure 2 illustrates the algorithm for the erase opera-
tion. Refer to the Erase/Program Operations table in
the AC Characteristics section for parameters, and
Figure 14 section for timing diagrams.
Erase Suspend/Erase Resume
Commands
The Erase Suspend command, B0h, allows the sys-
tem to interrupt a sector erase operation and then read
data from, program data to, any sector not selected for
erasure. The system may also lock or unlock any sec-
tor while the erase operation is suspended.
The sys-
tem must not write the sector lock/unlock
command to sectors selected for erasure.
The
bank address is required when writing this command.
This command is valid only during the sector erase op-
eration, including the minimum 50 μs time-out period
during the sector erase command sequence. The
Erase Suspend command is ignored if written during
the chip erase operation or Embedded Program
algorithm.
When the Erase Suspend command is written during
the sector erase operation, the device requires a
maximum of 20 μs to suspend the erase operation.
However, when the Erase Suspend command is written
during the sector erase time-out, the device immedi-
ately terminates the time-out period and suspends the
erase operation.
After the erase operation has been suspended, the
bank enters the erase-suspend-read mode. The
system can read data from or program data to any
sector not selected for erasure. (The device “erase sus-
pends” all sectors selected for erasure.) The system
may also lock or unlock any sector while in the
erase-suspend-read mode. Reading at any address
within erase-suspended sectors produces status infor-
mation on DQ7–DQ0. The system can use DQ7, or
DQ6 and DQ2 together, to determine if a sector is
actively erasing or is erase-suspended. Refer to the
Write Operation Status section for information on these
status bits.
After an erase-suspended program operation is com-
plete, the bank returns to the erase-suspend-read
mode. The system can determine the status of the
program operation using the DQ7 or DQ6 status bits,
just as in the standard program operation. Refer to the
Write Operation Status section for more information.
In the erase-suspend-read mode, the system can also
issue the autoselect command sequence. Refer to the
Autoselect Functions and Autoselect Command
Sequence sections for details.
To resume the sector erase operation, the system must
write the Erase Resume command. The bank address
of the erase-suspended bank is required when writing
this command. Further writes of the Resume command
are ignored. Another Erase Suspend command can be
written after the chip has resumed erasing.
Figure 2.
Erase Operation
START
Write Erase
Command Sequence
Data Poll
from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
Notes:
1. See Table 10 for erase command sequence.
2. See the section on DQ3 for information on the sector
erase timer.
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相關代理商/技術參數
參數描述
N643GT7GI 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
N643GT7MI 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
N6455A 制造商:Agilent Technologies 功能描述:HARD COPY MANUAL, 4000X-SERIES OSCILLOSCOPE; Plug Type:-; Accessory Type:Hard Copy Manual; For Use With:InfiniiVision 4000 X-Series Oscilloscopes ;RoHS Compliant: NA
N6456A 制造商:AGILENT TECHNOLOGIES, INC. 功能描述:Rackmount Kit for 2000 and 3000X Series Oscilloscopes 制造商:Agilent Technologies 功能描述:Bulk 制造商:Agilent Technologies 功能描述:OPTION RACK MOUNT KIT FOR X-SERIES 制造商:Agilent Technologies 功能描述:RACK MOUNT KIT; Accessory Type:Rackmount Kit; For Use With:Agilent InfiniiVision 2000X / 3000X Series Oscilloscopes ;RoHS Compliant: NA 制造商:Agilent Technologies 功能描述:Rack mount kit
N6457A 制造商:AGILENT TECHNOLOGIES, INC. 功能描述:Soft Carrying Case and Front Panel Cover for 2000 and 3000X Series Scopes 制造商:Agilent Technologies 功能描述:Bulk 制造商:Agilent Technologies 功能描述:ACCESSORY SOFT CASE AND FRONT PANEL 制造商:Agilent Technologies 功能描述:ACCESSORY, SOFT CASE AND FRONT PANEL 制造商:Agilent Technologies 功能描述:SOFT CARRYING CASE AND FRONT PANEL COVER; Accessory Type:Case and Front Panel Cover; For Use With:Agilent InfiniiVision 2000X / 3000X Series Oscilloscopes ;RoHS Compliant: NA 制造商:Agilent Technologies 功能描述:Soft Carrying Case
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