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參數資料
| 型號： | PBSS5350SA |
| 英文描述： | 50 V low VCEsat PNP transistor |
| 中文描述： | 50伏低飽和壓降PNP型晶體管 |
| 文件頁數： | 3/12頁 |
| 文件大小： | 78K |
| 代理商： | PBSS5350SA |
2002 Oct 22
3
Philips Semiconductors
Objective specification
50 V low V
CEsat
PNP transistor
PBSS5350SA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1.
2.
3.
Operated under pulsed conditions: pulse width t
p
≤
100 ms; duty cycle
δ ≤
0.25.
Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
2
.
THERMAL CHARACTERISTICS
Notes
1.
2.
3.
Operated under pulsed conditions: pulse width t
p
≤
100 ms; duty cycle
δ ≤
0.25.
Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
2
.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
50
50
5
2
3
5
0.5
830
900
1.2
+150
150
+150
UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CRP
I
CM
I
B
P
tot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
repetitive peak collector current
peak collector current
base current (DC)
total power dissipation
open emitter
open base
open collector
65
65
V
V
V
A
A
A
A
mW
mW
W
°
C
°
C
°
C
note 1
single peak
T
amb
≤
25
°
C; note 2
T
amb
≤
25
°
C; note 3
T
amb
≤
25
°
C; notes 1 and 2
T
stg
T
j
T
amb
storage temperature
junction temperature
operating ambient temperature
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to
ambient
in free air; notes 1 and 2
in free air; note 3
in free air; note 2
104
127
150
K/W
K/W
K/W
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相關代理商/技術參數 |
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|---|---|
| PBSS5350SS | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor |
| PBSS5350SS T/R | 功能描述:兩極晶體管 - BJT TRANS BISS TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PBSS5350SS,115 | 功能描述:兩極晶體管 - BJT TRANS BISS TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PBSS5350T | 制造商:NXP Semiconductors 功能描述:TRANSISTOR PNP SOT-23 制造商:NXP Semiconductors 功能描述:TRANSISTOR, PNP, SOT-23 制造商:NXP Semiconductors 功能描述:TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:300mW; DC Collector Current:3A; DC Current Gain hFE:200; Operating Temperature Min:-65C; Operating Temperature Max:150C;;RoHS Compliant: Yes 制造商:NXP Semiconductors 功能描述:PNP transistor 3A SOT23,PBSS5350T |
| PBSS5350T T/R | 功能描述:兩極晶體管 - BJT PNP 50V 2A LO VCESAT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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