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參數(shù)資料
型號(hào)： Q67100-Q3016
廠商： SIEMENS AG
英文描述： 4M x 36-Bit EDO-DRAM Module
中文描述： 4米× 36位江戶(hù)記憶體模組
文件頁(yè)數(shù)： 19/53頁(yè)
文件大小： 418K
代理商： Q67100-Q3016
HYB 39S64400/800/160BT(L)
64-MBit Synchronous DRAM
Data Book
19
12.99
Notes
1. For proper power-up see the operation section of this data sheet.
2. AC timing tests have
V
IL
= 0.4 V and
V
IH
= 2.4 V with the timing referenced to the 1.4 V crossover
point. The transition time is measured between
V
IH
and
V
IL
. All AC measurements assume
t
T
= 1 ns with the AC output load circuit shown in figure below. Specified
t
AC
and
t
OH
parameters
are measured with a 50 pF only, without any resistive termination and with a input signal of 1V /
ns edge rate between 0.8 V and 2.0 V.
3. If clock rising time is longer than 1 ns, a time (
t
T
/2
0.5) ns has to be added to this parameter.
4. If
t
T
is longer than 1 ns, a time (
t
T
1) ns has to be added to this parameter.
5. These parameter account for the number of clock cycle and depend on the operating frequency
of the clock, as follows:
the number of clock cycle = specified value of timing period (counted in fractions as a whole
number)
6. Self Refresh Exit is a synchronous operation and begins on the 2nd positive clock edge after
CKE returns high. Self Refresh Exit is not complete until a time period equal to
t
RC
is satisfied
once the Self Refresh Exit command is registered.
SPT03404
CLOCK
2.4 V
0.4 V
INPUT
HOLD
t
SETUP
t
t
T
OUTPUT
1.4 V
t
LZ
AC
t
t
AC
OH
t
HZ
t
1.4 V
CL
t
CH
t
50 pF
I/O
Measurement conditions for
t
AC
and
t
OH
相關(guān)PDF資料
PDF描述
Q67100-Q3017 4M x 36-Bit EDO-DRAM Module
Q67100-Q3018 8M x 36-Bit EDO-DRAM Module
Q67100-Q3019 8M x 36-Bit EDO-DRAM Module
Q67100-Q433 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM
Q67100-Q1100 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
Q67100-Q3017 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:4M x 36-Bit EDO-DRAM Module
Q67100-Q3018 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:8M x 36-Bit EDO-DRAM Module
Q67100-Q3019 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:8M x 36-Bit EDO-DRAM Module
Q67100-Q433 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM
Q67100-Q518 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:1 M x 1-Bit Dynamic RAM Low Power 1 M ⅴ 1-Bit Dynamic RAM
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