- 您現在的位置：買賣IC網 > PDF目錄192296 > S29CL032J0RFFI110 (SPANSION LLC) 1M X 32 FLASH 3.3V PROM, 48 ns, PBGA80 PDF資料下載
參數資料
| 型號： | S29CL032J0RFFI110 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 1M X 32 FLASH 3.3V PROM, 48 ns, PBGA80 |
| 封裝： | 13 X 11 MM, 1 MM PITCH, LEAD FREE, FORTIFIED, BGA-80 |
| 文件頁數： | 24/78頁 |
| 文件大?。?/td> | 1825K |
| 代理商： | S29CL032J0RFFI110 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁當前第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁
28
S29CD-J & S29CL-J Flash Family
S29CD-J_CL-J_00_B1 September27,2006
Prel imi n ary
shows the remaining address bits that are don’t care. When all necessary bits have been set as
required, the programming equipment may then read the corresponding identifier code on DQ7–
DQ0.
In order to access the autoselect codes in-system, the host system can issue the autoselect com-
mand via the command. This method does not require VID. See Command Definitions on
page 71 for details on using the autoselect mode. Autoselect mode can be used in either syn-
chronous (Burst) mode or asynchronous (Non Burst) mode.
The system must write the reset command to exit the autoselect mode and return to reading the
array data. See Table 8.7 for command sequence details.
Legend: L = Logic Low = VIL, H = Logic High = VIH, SA = Sector Address, X = Don’t care.
Note: The autoselect codes can also be accessed in-system via command sequences. See Table 20.2.
8.6
VersatileI/O (VIO) Control
The VersatileI/O (VIO) control allows the host system to set the voltage levels that the device
generates at its data outputs and the voltages tolerated at its data inputs to the same voltage
level that is asserted on the VIO pin. The output voltage generated on the device is determined
based on the VIO (VCCQ) level. For the 2.6 V (CD-J), a VIO of 1.65 V - 3.6 V (CD032J has a VIO
of 1.65V to 2.75V) allows the device to interface with I/Os lower than 2.5 V. For a 3.3 V VCC (CL-
J), a VIO of 1.65 V-3.60 V allows the device to interface with I/Os lower than 3.0 V.
8.7
Program/Erase Operations
These devices are capable of several modes of programming and or erase operations which are
described in detail in the following sections. However, prior to any programming and or erase
operation, devices must be set up appropriately as outlined in the configuration register
(Table 8.5 on page 27). During a synchronous write operation, to write a command or command
sequence (including programming data to the device and erasing sectors of memory), the sys-
tem must drive AVD# and CE# to VIL, and OE# to VIH when providing an address to the device,
and drive WE# and CE# to VIL, and OE# to VIH when writing commands or programming data.
8.7.1
Programming
Programming is a four-bus-cycle operation. The program command sequence is initiated by writ-
ing two unlock write cycles, followed by the program setup command. The program address and
data are written next, which in turn initiate the Embedded Program algorithm. The system is not
Table 8.7 S29CD-J & S29CL-J Flash Family Autoselect Codes (High Voltage Method)
Description
CE# OE# WE#
A19
to
A11
A10 A9 A8 A7 A6
A5
to
A4
A3 A2 A1 A0
DQ7
to
DQ0
Manufacturer ID: Spansion
LL
H
X
VID X
X
L
X
L
0001h
Au
to
se
le
ct
De
vi
ce
Co
de
Read Cycle 1
LL
H
X
VID X
L
X
L
H
007Eh
Read Cycle 2
LL
H
X
VID X
LLL
H
L
08h or 36h for
CD016J
46h for CL016J
09h for CD032J
49h for CL032J
Read Cycle 3
LL
H
X
VID X
L
HHHH
0000h
Top Boot Option
0001h
Bottom Boot Option
PPB Protection Status
LL
H
SA
X
VID X
LLLLL
H
L
0000h (unprotected)
0001h (protected)
相關PDF資料 |
PDF描述 |
|---|---|
| S29CL032J0RFFN130 | 1M X 32 FLASH 3.3V PROM, 48 ns, PBGA80 |
| S29CL032J1JFAI110 | 1M X 32 FLASH 3.3V PROM, 54 ns, PBGA80 |
| S29CL032J1MFAN120 | 1M X 32 FLASH 3.3V PROM, 54 ns, PBGA80 |
| S29CL032J0PQAN102 | 1M X 32 FLASH 3.3V PROM, 54 ns, PQFP80 |
| S29GL016A10FAI020 | 1M X 16 FLASH 3V PROM, 100 ns, PBGA64 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| S29GL016A | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL016A100BAI010 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL016A100BAI012 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL016A100BAI013 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL016A100BAIR10 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
發布緊急采購，3分鐘左右您將得到回復。