- 您現在的位置：買賣IC網 > PDF目錄192296 > S29CL032J0RFFI110 (SPANSION LLC) 1M X 32 FLASH 3.3V PROM, 48 ns, PBGA80 PDF資料下載
參數資料
| 型號： | S29CL032J0RFFI110 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 1M X 32 FLASH 3.3V PROM, 48 ns, PBGA80 |
| 封裝： | 13 X 11 MM, 1 MM PITCH, LEAD FREE, FORTIFIED, BGA-80 |
| 文件頁數： | 29/78頁 |
| 文件大小： | 1825K |
| 代理商： | S29CL032J0RFFI110 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁當前第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁
September 27, 2006 S29CD-J_CL-J_00_B1
S29CD-J & S29CL-J Flash Family
33
Pr el im i n a r y
Notes:
In this mode, the write protection function is bypassed unless the
PPB Lock Bit = 1.
The ACC pin must not be at VHH for operations other than acceler-
ated programming and accelerated chip erase, or device damage
may result.
The ACC pin must not be left floating or unconnected; inconsistent
behavior of the device may result.
The Accelerated Program command is not permitted if the Secured
Silicon sector is enabled.
8.7.7
Unlock Bypass
The device features an Unlock Bypass mode to facilitate faster programming, erasing (Sector and
Chip Erase), as well as CFI commands. Once the device enters the Unlock Bypass mode, only
two write cycles are required to program or erase data, instead of the normal four cycles. This
results in faster total programming/erasing time.
Command Definitions on page 71 shows the requirements for the unlock bypass command
sequences.
During the unlock bypass mode only the Read, Unlock Bypass Program and Unlock Bypass Reset
commands are valid. To exit the unlock bypass mode, the system must issue the two-cycle un-
lock bypass reset command sequence, which returns the device to read mode.
Notes:
1. The Unlock Bypass Command is ignored if the Secured Silicon sector is enabled.
2. Unlike the standard program or erase commands, there is no Unlock Bypass Program/Erase
Suspend or Program/Erase Resume command.
8.7.8
Simultaneous Read/Write
The simultaneous read/write feature allows the host system to read data from one bank of mem-
ory while programming or erasing in another bank of memory.
The Simultaneous Read/Write feature can be used to perform the following:
Programming in one bank, while reading in the other bank
Erasing in one bank, while reading in the other bank
Programming a PPB, while reading data from the large bank or status from the small bank
Erasing a PBB, while reading data from the large bank or status from the small bank
Any of the above situations while in the Secured Silicon Sector Mode
The Simultaneous R/W feature can not be performed during the following modes:
CFI Mode
Password Program operation
Password Verify operation
As an alternative to using the Simultaneous Read/Write feature, the user may also suspend an
erase or program operation to read in another location within the same bank (except for the sec-
tor being erased).
8.8
Write Operation Status
The device provides several bits to determine the status of a program or erase operation. The
following subsections describe the function of DQ7, DQ6, DQ2, DQ5, DQ3, and RY/BY#.
相關PDF資料 |
PDF描述 |
|---|---|
| S29CL032J0RFFN130 | 1M X 32 FLASH 3.3V PROM, 48 ns, PBGA80 |
| S29CL032J1JFAI110 | 1M X 32 FLASH 3.3V PROM, 54 ns, PBGA80 |
| S29CL032J1MFAN120 | 1M X 32 FLASH 3.3V PROM, 54 ns, PBGA80 |
| S29CL032J0PQAN102 | 1M X 32 FLASH 3.3V PROM, 54 ns, PQFP80 |
| S29GL016A10FAI020 | 1M X 16 FLASH 3V PROM, 100 ns, PBGA64 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| S29GL016A | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL016A100BAI010 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL016A100BAI012 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL016A100BAI013 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL016A100BAIR10 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
發布緊急采購，3分鐘左右您將得到回復。