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參數(shù)資料
型號： S29CL032J0RFFI110
廠商： SPANSION LLC
元件分類： PROM
英文描述： 1M X 32 FLASH 3.3V PROM, 48 ns, PBGA80
封裝： 13 X 11 MM, 1 MM PITCH, LEAD FREE, FORTIFIED, BGA-80
文件頁數(shù)： 75/78頁
文件大小： 1825K
代理商： S29CL032J0RFFI110
September 27, 2006 S29CD-J_CL-J_00_B1
S29CD-J & S29CL-J Flash Family
75
Pr el im i n a r y
Additional Resources
Updated contact information.
Hardware Reset (RESET#)
Added section.
Autoselect
Updated third and fourth paragraphs in section. Updated Autoselect Codes table.
Erase Suspend / Erase Resume Commands
Modified second paragraph. Replaced allowable operations table with bulleted list.
Program Suspend / Program Resume Commands
Replaced allowable operations table with bulleted list.
Reset Command
Added section.
Secured Silicon Sector Flash Memory Region
Modified Secured Silicon Sector Addresses table.
Absolute Maximum Ratings
Modified VCC and VIO ratings. Modified Note 1.
Operating Ranges
Modified specification titles and descriptions (no specification value changes).
DC Characteristics, CMOS Compatible table
Modified ICCB specification. Deleted Note 5. Added Note 3 references to table.
Burst Mode Read for 32 Mb and 16 Mb table
Modified tADVCS, tCLKH, tCLKL, tAAVS specifications. Added tRSTZ, tWAVDH1, and tWAVDH2 specifica-
tions. Added Notes 2 and 3, and note references to table.
Bust Mode Read (x32 Mode) figure
Added tAAVH, deleted tDVCH.
Synchronous Command Write/Read Timing figure
Added tWAVDH1 and tWAVDH2 to figure. Deleted tACS and tACH from figure.
Hardware Reset (RESET#)
Added table to section.
Erase/Program Operations table
Added note references. Deleted tOEP specification.
Erase and Programming Performance
Changed Double Word Program Time specification.
Common Flash Memory Interface (CFI)
CFI System Interface String table: Changed description and data for addresses 1Bh and 1Ch.
Device Geometry Definition table: Changed description and data for address 27h.
Rev B1 (September 27, 2006)
Distinctive Characteristics
Changed cycling endurance specification to typical.
Performance Characteristics
Changed tBACC specifications for 66 MHz, 56 MHz, 40 MHz speed options.
相關(guān)PDF資料
PDF描述
S29CL032J0RFFN130 1M X 32 FLASH 3.3V PROM, 48 ns, PBGA80
S29CL032J1JFAI110 1M X 32 FLASH 3.3V PROM, 54 ns, PBGA80
S29CL032J1MFAN120 1M X 32 FLASH 3.3V PROM, 54 ns, PBGA80
S29CL032J0PQAN102 1M X 32 FLASH 3.3V PROM, 54 ns, PQFP80
S29GL016A10FAI020 1M X 16 FLASH 3V PROM, 100 ns, PBGA64
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL016A 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL016A100BAI010 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL016A100BAI012 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL016A100BAI013 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL016A100BAIR10 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
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