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參數(shù)資料
型號(hào)： S29CL032J0RFFI110
廠商： SPANSION LLC
元件分類： PROM
英文描述： 1M X 32 FLASH 3.3V PROM, 48 ns, PBGA80
封裝： 13 X 11 MM, 1 MM PITCH, LEAD FREE, FORTIFIED, BGA-80
文件頁(yè)數(shù)： 66/78頁(yè)
文件大小： 1825K
代理商： S29CL032J0RFFI110
September 27, 2006 S29CD-J_CL-J_00_B1
S29CD-J & S29CL-J Flash Family
67
Pr el im i n a r y
18.8 Erase and Programming Performance
Notes:
1. Typical program and erase times assume the following conditions: 25
°C, 2.5 V V
CC, 100K cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 145°C, VCC = 2.5 V, 1M cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command.
See Table 20.1 and Table 20.2 for further information on command definitions.
6. PPBs have a program/erase cycle endurance of 100 cycles.
7. Guaranteed cycles per sector is 100K minimum.
18.9 Latchup Characteristics
Note: Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time.
18.10 PQFP and Fortified BGA Pin Capacitance
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
Table 18.6 Erase and Programming Performance
Parameter
Typ
Max
Unit
Comments
Sector Erase Time
0.5
5
s
Excludes 00h programming prior to erasure
Chip Erase Time
16 Mb = 46
32 Mb = 78
16 Mb = 230
32 Mb = 460
s
Double Word Program Time
8
130
s
Excludes system level overhead (Note 5)
Accelerated Double Word Program Time
8
130
s
Accelerated Chip Program Time
16 Mb = 5
32 Mb = 10
16 Mb = 50
32 Mb = 100
s
Chip Program Time (Note 3)
x32
16 Mb = 12
32 Mb = 24
16 Mb = 120
32 Mb = 240
s
Table 18.7 Latchup Characteristics
Description
Min
Max
Input voltage with respect to VSS on all pins except I/O pins (including A9, ACC, and WP#)
–1.0 V
12.5 V
Input voltage with respect to VSS on all I/O pins
–1.0 V
VCC + 1.0 V
VCC Current
–100 mA
+100 mA
Table 18.8 PQFP and Fortified BGA Pin Capacitance
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
6
7.5
pF
COUT
Output Capacitance
VOUT = 0
8.5
12
pF
CIN2
Control Pin Capacitance
VIN = 0
7.5
9
pF
相關(guān)PDF資料
PDF描述
S29CL032J0RFFN130 1M X 32 FLASH 3.3V PROM, 48 ns, PBGA80
S29CL032J1JFAI110 1M X 32 FLASH 3.3V PROM, 54 ns, PBGA80
S29CL032J1MFAN120 1M X 32 FLASH 3.3V PROM, 54 ns, PBGA80
S29CL032J0PQAN102 1M X 32 FLASH 3.3V PROM, 54 ns, PQFP80
S29GL016A10FAI020 1M X 16 FLASH 3V PROM, 100 ns, PBGA64
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