欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號： S29GL032M10BFIR23
廠商： SPANSION LLC
元件分類： PROM
英文描述： T528 Series - I, M, Z Case Sizes - Face Down Termination Tantalum Surface Mount Capacitor; Capacitance [nom]: 220uF; Working Voltage (Vdc)[max]: 6.3V; Capacitance Tolerance: +/-20%; Dielectric: Tantalum, Solid; ESR: 9.0mΩ; Lead Style: Surface-Mount Chip; Lead Dimensions: 7343-17; Termination: 100% Tin (Sn); Body Dimensions: 7.3mm x 4.3mm x 1.7mm; Temperature Range: -55C to +105C; Container: Tape & Reel; Qty per Container: 1,000; Features: Face Down Termination
中文描述： 2M X 16 FLASH 3V PROM, 100 ns, PBGA64
封裝： 13 X 11 MM, LEAD FREE, FORTIFIED BGA-64
文件頁數： 48/158頁
文件大小： 4695K
代理商： S29GL032M10BFIR23
August 4, 2004 S29GLxxxM_00_B1_E
S29GLxxxM MirrorBitTM Flash Family
141
Da ta shee t
Erase and Programming Performance
Notes:
1. Typical program and erase times assume the following conditions: 25°C, VCC = 3.0V, 10,000 cycles; checkerboard data pattern.
2. Under worst case conditions of 90
°C; Worst case VCC, 100,000 cycles.
3. Effective programming time (typ) is 15 s (per word), 7.5 s (per byte).
4. Effective accelerated programming time (typ) is 12.5 s (per word), 6.3 s (per byte).
5. Effective write buffer specification is calculated on a per-word/per-byte basis for a 16-word/32-byte write buffer operation.
6. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
7. System-level overhead is the time required to execute the command sequence(s) for the program command. See Tables 35 and 36 for
further information on command definitions.
Parameter
Typ (Note 1)
Max
(Note 2)
Unit
Comments
Sector Erase Time
0.5
3.5
sec
Excludes
00h
programm
ing prior to
erasure
Note (6)
Chip Erase Time
S29GL032M
32
64
sec
S29GL064M
64
128
S29GL128M
128
256
S29GL256M
256
512
Total Write Buffer Program Time Notes (3), (5)
240
s
Excludes
system
level
overhead
Note (7)
Total Accelerated Effective Write Buffer Program Time Notes (4),
200
s
Chip Program Time
S29GL032M
31.5
sec
S29GL064M
63
S29GL128M
126
S29GL256M
252
相關PDF資料
PDF描述
S29GL032M10BFIR12 MirrorBit Flash Family
S29GL032M10BFIR13 MirrorBit Flash Family
S29GL032M10BFIR30 T528 Series - I, M, Z Case Sizes - Face Down Termination Tantalum Surface Mount Capacitor; Capacitance [nom]: 220uF; Working Voltage (Vdc)[max]: 6.3V; Capacitance Tolerance: +/-20%; Dielectric: Tantalum, Solid; ESR: 12mΩ; Lead Style: Surface-Mount Chip; Lead Dimensions: 7343-17; Termination: 100% Tin (Sn); Body Dimensions: 7.3mm x 4.3mm x 1.7mm; Temperature Range: -55C to +105C; Container: Tape & Reel; Qty per Container: 1,000; Features: Face Down Termination
S29GL032M10FAIR22 MirrorBit Flash Family
S29GL032M10FAIR23 MirrorBit Flash Family
相關代理商/技術參數
參數描述
S29GL032M10BFIR30 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL032M10BFIR32 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL032M10BFIR33 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL032M10BFIR40 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL032M10BFIR42 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family
發布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發布成功！您可以繼續發布采購。也可以進入我的后臺，查看報價

發布成功！您可以繼續發布采購。也可以進入我的后臺，查看報價

*型號 *數量 廠商 批號 封裝
添加更多采購

我的聯系方式

*
*
*
主站蜘蛛池模板： 刚察县| 济南市| 武汉市| 林甸县| 郸城县| 金昌市| 原平市| 涞源县| 天水市| 武安市| 洪江市| 吉首市| 昂仁县| 韶关市| 扎赉特旗| 米泉市| 涞水县| 竹山县| 东辽县| 邵阳县| 高碑店市| 鹤峰县| 额尔古纳市| 包头市| 新郑市| 乌鲁木齐县| 胶州市| 霞浦县| 湄潭县| 石门县| 库伦旗| 盐津县| 惠东县| 宁武县| 水城县| 贵港市| 东辽县| 弥勒县| 慈溪市| 东乡| 绵阳市|