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參數資料
| 型號： | S29GL032M10BFIR23 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | T528 Series - I, M, Z Case Sizes - Face Down Termination Tantalum Surface Mount Capacitor; Capacitance [nom]: 220uF; Working Voltage (Vdc)[max]: 6.3V; Capacitance Tolerance: +/-20%; Dielectric: Tantalum, Solid; ESR: 9.0mΩ; Lead Style: Surface-Mount Chip; Lead Dimensions: 7343-17; Termination: 100% Tin (Sn); Body Dimensions: 7.3mm x 4.3mm x 1.7mm; Temperature Range: -55C to +105C; Container: Tape & Reel; Qty per Container: 1,000; Features: Face Down Termination |
| 中文描述： | 2M X 16 FLASH 3V PROM, 100 ns, PBGA64 |
| 封裝： | 13 X 11 MM, LEAD FREE, FORTIFIED BGA-64 |
| 文件頁數： | 6/158頁 |
| 文件大小： | 4695K |
| 代理商： | S29GL032M10BFIR23 |
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August 4, 2004 S29GLxxxM_00_B1_E
S29GLxxxM MirrorBitTM Flash Family
103
Da ta shee t
Command Definitions
Writing specific address and data commands or sequences into the command register initiates device operations.
Table 35 and Table 36 define the valid register command sequences. Writing incorrect address and data values or
writing them in the improper sequence may place the device in an unknown state. A reset command is then re-
quired to return the device to reading array data.
All addresses are latched on the falling edge of WE# or CE#, whichever happens later. All data is latched on the
rising edge of WE# or CE#, whichever happens first. Refer to the AC Characteristics section for timing diagrams.
Reading Array Data
The device is automatically set to reading array data after device power-up. No commands are required to retrieve
data. The device is ready to read array data after completing an Embedded Program or Embedded Erase
algorithm.
After the device accepts an Erase Suspend command, the device enters the erase-suspend-read mode, after
which the system can read data from any non-erase-suspended sector. After completing a programming operation
in the Erase Suspend mode, the system may once again read array data with the same exception. See the Erase
Suspend/Erase Resume Commands section for more information.
The system must issue the reset command to return the device to the read (or erase-suspend-read) mode if DQ5
goes high during an active program or erase operation, or if the device is in the autoselect mode. See the next
section, Reset Command, for more information.
See also Requirements for Reading Array Data in the Device Bus Operations section for more information. The
Read-Only Operations–“AC Characteristics” section on page 124 provides the read parameters, and 13 shows the
timing diagram.
Reset Command
Writing the reset command resets the device to the read or erase-suspend-read mode. Address bits are don’t
cares for this command.
The reset command may be written between the sequence cycles in an erase command sequence before erasing
begins. This resets the device to the read mode. Once erasure begins, however, the device ignores reset com-
mands until the operation is complete.
The reset command may be written between the sequence cycles in a program command sequence before pro-
gramming begins. This resets the device to the read mode. If the program command sequence is written while
the device is in the Erase Suspend mode, writing the reset command returns the device to the erase-suspend-
read mode. Once programming begins, however, the device ignores reset commands until the operation is
complete.
The reset command may be written between the sequence cycles in an autoselect command sequence. Once in
the autoselect mode, the reset command must be written to return to the read mode. If the device entered the
autoselect mode while in the Erase Suspend mode, writing the reset command returns the device to the erase-
suspend-read mode.
If DQ5 goes high during a program or erase operation, writing the reset command returns the device to the read
mode (or erase-suspend-read mode if the device was in Erase Suspend).
Note that if DQ1 goes high during a Write Buffer Programming operation, the system must write the Write-to-
Buffer-Abort Reset command sequence to reset the device for the next operation.
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PDF描述 |
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| S29GL032M10BFIR12 | MirrorBit Flash Family |
| S29GL032M10BFIR13 | MirrorBit Flash Family |
| S29GL032M10BFIR30 | T528 Series - I, M, Z Case Sizes - Face Down Termination Tantalum Surface Mount Capacitor; Capacitance [nom]: 220uF; Working Voltage (Vdc)[max]: 6.3V; Capacitance Tolerance: +/-20%; Dielectric: Tantalum, Solid; ESR: 12mΩ; Lead Style: Surface-Mount Chip; Lead Dimensions: 7343-17; Termination: 100% Tin (Sn); Body Dimensions: 7.3mm x 4.3mm x 1.7mm; Temperature Range: -55C to +105C; Container: Tape & Reel; Qty per Container: 1,000; Features: Face Down Termination |
| S29GL032M10FAIR22 | MirrorBit Flash Family |
| S29GL032M10FAIR23 | MirrorBit Flash Family |
相關代理商/技術參數 |
參數描述 |
|---|---|
| S29GL032M10BFIR30 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| S29GL032M10BFIR32 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| S29GL032M10BFIR33 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| S29GL032M10BFIR40 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| S29GL032M10BFIR42 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family |
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